Semiconductor laser device
文献类型：专利
| 作者 | HIROSE MASANORI; YOSHIKAWA AKIO; SUGINO TAKASHI; YAMAMOTO ATSUYA; NAKAMURA AKIRA; KUME MASAHIRO |
| 发表日期 | 1989-08-14 |
| 专利号 | JP1989201980A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To realize a single horizontal mode oscillation at a low threshold current and low operation current and to enhance reliability by providing a double hetero construction with a stripe-shaped projecting part on a conductive substrate and by providing a construction where polyimide is embedded at a part other than the stripe-shape projecting part through an insulation film and metal electrode is mounted on it. CONSTITUTION:When a semiconductor laser is biased in forward direction, current is injected into an active layer directly below the projecting part, stripe- shape projecting part becomes diffraction rate waveguide channel, and laser oscillates within this stripe width. The injected current is held with ridge and is injected into the active layer 3 efficiently so that basic horizontal mode oscillation can be obtained at a low threshold current and low-operation current and at the same time projection can be made simply without performing diffusion, etc., of impurities with one-time crystal growth. |
| 公开日期 | 1989-08-14 |
| 申请日期 | 1988-02-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83114]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HIROSE MASANORI,YOSHIKAWA AKIO,SUGINO TAKASHI,et al. Semiconductor laser device. JP1989201980A. 1989-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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