Effects of total ionizing dose on single event effect sensitivity of FRAMs
文献类型：期刊论文
| 作者 | Ji, Qinggang1,2; Liu, Jie1 ; Li, Dongqing1,2; Liu, Tianqi1; Ye, Bing1; Zhao, Peixiong1,2; Sun, Youmei1
|
| 刊名 | MICROELECTRONICS RELIABILITY
 |
| 出版日期 | 2019-04-01 |
| 卷号 | 95页码:1-7 |
| 关键词 | Ferroelectric random access memory Total ionizing dose Single event effect TCAD simulation |
| ISSN号 | 0026-2714 |
| DOI | 10.1016/j.microrel.2019.02.010 |
| 英文摘要 | Reliability of ferroelectric random access memories (FRAMs) is an important issue in Space application. In this work, we investigated the impact of total ionizing dose (TID) on single event effect (SEE) sensitivity of FRAMs. Five types of errors were detected. The event cross section detected in dynamic tests decreased after irradiation. Biased devices during TID irradiation had a greater decrease in event cross section than unbiased devices. TCAD simulations were performed to investigate the effects of heavy ions on memory cells of FRAMs. The collected charges at the drain of NMOS transistors induced by incident ions had a negative impact on polarized state of the ferroelectric capacitors. |
| WOS关键词 | RADIATION ; IRRADIATION ; IMPACT |
| 资助项目 | National Natural Science Foundation of China[U1532261] ; National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11675233] |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000464479300001 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/134010]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Liu, Jie |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 2.Univ Chinese Acad Sci, Sch Nucl Sci & Technol, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ji, Qinggang,Liu, Jie,Li, Dongqing,et al. Effects of total ionizing dose on single event effect sensitivity of FRAMs[J]. MICROELECTRONICS RELIABILITY,2019,95:1-7. |
| APA | Ji, Qinggang.,Liu, Jie.,Li, Dongqing.,Liu, Tianqi.,Ye, Bing.,...&Sun, Youmei.(2019).Effects of total ionizing dose on single event effect sensitivity of FRAMs.MICROELECTRONICS RELIABILITY,95,1-7. |
| MLA | Ji, Qinggang,et al."Effects of total ionizing dose on single event effect sensitivity of FRAMs".MICROELECTRONICS RELIABILITY 95(2019):1-7. |
入库方式： OAI收割
来源：近代物理研究所
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