The electron emission yield induced by the interaction of highly charged argon ions with silicon surface
文献类型：期刊论文
| 作者 | Zhao, Yong-Tao ; Xiao, Guo-Qing; Xu, Zhong-Feng; Abdul Qayyum; Wang, Yu-Yu; Zhang, Xiao-An; Li, Fu-Li; Zhan, Wen-Long; Zhao, Yong-Tao; Xiao, Guo-Qing
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| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2007-10-01 |
| 卷号 | 56期号:10页码:5734-5738 |
| 关键词 | highly charged ions (HCI) potential energy deposition electronic energy loss the electron yield per ion |
| ISSN号 | 1000-3290 |
| 英文摘要 | The electron emission yield of the interaction of highly charged argon ions with silicon surface is reported. The experiment was done at the Atomic Physics Research Platform on the Electron Cyclotron Resonance (ECR) Ion Source of the National Laboratory HIRFL (Heavy Ion Research Facility in Lanzhou). In the experiment, the potential energy and kinetic energy was selected by varying the projectile charge states and extracting voltage, thus the contributions of the projectile potential energy deposition and electronic energy loss in the solid are extensively investigated. The results show that, the two main factors leading to surface electron emission, namely the potential energy deposition and the electronic energy loss, are both approximately proportional to the electron emission yield per ion. |
| WOS关键词 | HOLLOW ATOMS ; SPECTRA |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000250313000030 |
| 出版者 | CHINESE PHYSICAL SOC |
| 公开日期 | 2010-10-29 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/5879]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） 近代物理研究所_实验物理中心 |
| 通讯作者 | Zhao, Yong-Tao; Zhao, Yong-Tao |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 3.Xi An Jiao Tong Univ, Dept Appl Phys, Xian 710049, Peoples R China 4.Xianyang Normal Univ, Dept Modern Sci, Xianyang 712000, Peoples R China 5.Inst Nucl Sci & Technol, Islamabad 44000, Pakistan 6.Xianyang Normal Univ, Dept Modern Sci, Xianyang 712000, Peoples R China 7.Inst Nucl Sci & Technol, Islamabad 44000, Pakistan 8.Xi An Jiao Tong Univ, Dept Appl Phys, Xian 710049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Yong-Tao,Xiao, Guo-Qing,Xu, Zhong-Feng,et al. The electron emission yield induced by the interaction of highly charged argon ions with silicon surface[J]. ACTA PHYSICA SINICA,2007,56(10):5734-5738. |
| APA | Zhao, Yong-Tao.,Xiao, Guo-Qing.,Xu, Zhong-Feng.,Abdul Qayyum.,Wang, Yu-Yu.,...&Zhan, Wen-Long.(2007).The electron emission yield induced by the interaction of highly charged argon ions with silicon surface.ACTA PHYSICA SINICA,56(10),5734-5738. |
| MLA | Zhao, Yong-Tao,et al."The electron emission yield induced by the interaction of highly charged argon ions with silicon surface".ACTA PHYSICA SINICA 56.10(2007):5734-5738. |
入库方式： OAI收割
来源：近代物理研究所
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