Laser-Induced Micro SEL Characterization of SRAM Devices
文献类型：会议论文
| 作者 | Yingqi, Ma2; Jianwei, Han2; Shipeng, Shangguan1,2; Xiang, Zhu1,2; Rui, Chen2 |
| 出版日期 | 2019 |
| 会议日期 | July 8, 2019 - July 12, 2019 |
| 会议地点 | San Antonio, TX, United states |
| 卷号 | 2019-July |
| DOI | 10.1109/REDW.2019.8906568 |
| 英文摘要 | This paper presents micro single event latch-up characterization of SRAM by laser backside testing. The SEL threshold and the detailed micro SEL features have been investigated by laser automatic scanning experiment. The micro SEL results can give the reference for the hardness assurance in circuit system level. © 2019 IEEE. |
| 会议录 | IEEE Radiation Effects Data Workshop
 |
| 语种 | 英语 |
| ISBN号 | 9781728138282 |
| 源URL | [http://ir.nssc.ac.cn/handle/122/7279]  |
| 专题 | 国家空间科学中心_空间技术部 |
| 作者单位 | 1.University of Chinese Academy of Sciences, Beijing; 100049, China 2.Chinese Academy of Sciences, National Space Science Center, Beijing; 100190, China; |
| 推荐引用方式 GB/T 7714 | Yingqi, Ma,Jianwei, Han,Shipeng, Shangguan,et al. Laser-Induced Micro SEL Characterization of SRAM Devices[C]. 见:. San Antonio, TX, United states. July 8, 2019 - July 12, 2019. |
入库方式： OAI收割
来源：国家空间科学中心
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