Controllable and Stable Quantized Conductance States in a Pt/HfOx/ITO Memristor
文献类型：期刊论文
| 作者 | Xue, Wuhong; Li, Yi; Liu, Gang; Wang, Zhuorui; Xiao, Wen; Jiang, Kemin; Zhong, Zhicheng; Gao, Shuang; Ding, Jun; Miao, Xiangshui |
| 刊名 | ADVANCED ELECTRONIC MATERIALS
 |
| 关键词 | LOGIC OPERATIONS MEMORY DEVICES TRANSPORT |
| DOI | 10.1002/aelm.201901055 |
| 英文摘要 | Controllable and Stable Quantized Conductance States in a Pt/HfOx/ITO Memristor |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/17839]  |
| 专题 | 2019专题 |
| 作者单位 | 1.Liu, G 2.Gao, S 3.Xu, XH (reprint author), Shanxi Normal Univ, Sch Chem & Mat Sci, Key Lab Magnet Mol & Magnet Informat Mat, Linfen 041004, Shanxi, Peoples R China. 4.Li, RW (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, CAS Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Xue, Wuhong,Li, Yi,Liu, Gang,et al. Controllable and Stable Quantized Conductance States in a Pt/HfOx/ITO Memristor[J]. ADVANCED ELECTRONIC MATERIALS. |
| APA | Xue, Wuhong.,Li, Yi.,Liu, Gang.,Wang, Zhuorui.,Xiao, Wen.,...&Li, Run-Wei. |
| MLA | Xue, Wuhong,et al."Controllable and Stable Quantized Conductance States in a Pt/HfOx/ITO Memristor".ADVANCED ELECTRONIC MATERIALS |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。