Highly in-plane anisotropic 2D semiconductors beta-AuSe with multiple superior properties: a first-principles investigation
文献类型：期刊论文
| 作者 | Gong, Peng-Lai; Zhang, Fang; Li, Liang; Deng, Bei; Pan, Hui; Huang, Liang-Feng; Shi, Xing-Qiang |
| 刊名 | JOURNAL OF PHYSICS-CONDENSED MATTER
 |
| 出版日期 | 2019 |
| 卷号 | 31期号:39 |
| 关键词 | BLACK PHOSPHORUS ELECTRON LOCALIZATION CARRIER MOBILITY CRYSTAL STRAIN PHASE GAP |
| DOI | 10.1088/1361-648X/ab2a6a |
| 英文摘要 | Highly in-plane anisotropic 2D semiconductors beta-AuSe with multiple superior properties: a first-principles investigation |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/17932]  |
| 专题 | 2019专题 |
| 作者单位 | 1.Shi, XQ (reprint author), Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China. 2.Pan, H (reprint author), Univ Macau, Inst Appl Phys & Mat Engn, Minist Educ, Joint Key Lab, Taipa, Macau, Peoples R China. 3.Huang, LF (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Marine Mat & Related Technol, Ningbo 315201, Zhejiang, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Gong, Peng-Lai,Zhang, Fang,Li, Liang,et al. Highly in-plane anisotropic 2D semiconductors beta-AuSe with multiple superior properties: a first-principles investigation[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2019,31(39). |
| APA | Gong, Peng-Lai.,Zhang, Fang.,Li, Liang.,Deng, Bei.,Pan, Hui.,...&Shi, Xing-Qiang.(2019).Highly in-plane anisotropic 2D semiconductors beta-AuSe with multiple superior properties: a first-principles investigation.JOURNAL OF PHYSICS-CONDENSED MATTER,31(39). |
| MLA | Gong, Peng-Lai,et al."Highly in-plane anisotropic 2D semiconductors beta-AuSe with multiple superior properties: a first-principles investigation".JOURNAL OF PHYSICS-CONDENSED MATTER 31.39(2019). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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