Deep UV Laser at 249 nm Based on GaN Quantum Wells
文献类型：期刊论文
| 作者 | Shan, Maocheng; Zhang, Yi; Tran, Tinh B.; Jiang, Jie'an; Long, Hanling; Zheng, Zhihua; Wang, An'ge; Guo, Wei; Ye, Jichun; Chen, Changqing |
| 刊名 | ACS PHOTONICS
 |
| 出版日期 | 2019 |
| 卷号 | 6期号:10页码:2387-2391 |
| DOI | 10.1021/acsphotonics.9b00882 |
| 英文摘要 | Deep UV Laser at 249 nm Based on GaN Quantum Wells |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/17937]  |
| 专题 | 2019专题 |
| 作者单位 | 1.Chen, CQ 2.Li, XH (reprint author), KAUST, Adv Semicond Lab, Thuwal 23955, Saudi Arabia. 3.Dai, JN (reprint author), Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Hubei, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Shan, Maocheng,Zhang, Yi,Tran, Tinh B.,et al. Deep UV Laser at 249 nm Based on GaN Quantum Wells[J]. ACS PHOTONICS,2019,6(10):2387-2391. |
| APA | Shan, Maocheng.,Zhang, Yi.,Tran, Tinh B..,Jiang, Jie'an.,Long, Hanling.,...&Li, Xiaohang.(2019).Deep UV Laser at 249 nm Based on GaN Quantum Wells.ACS PHOTONICS,6(10),2387-2391. |
| MLA | Shan, Maocheng,et al."Deep UV Laser at 249 nm Based on GaN Quantum Wells".ACS PHOTONICS 6.10(2019):2387-2391. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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