An industrially viable TOPCon structure with both ultra-thin SiOx and n(+) - poly-Si processed by PECVD for p-type c-Si solar cells
文献类型：期刊论文
| 作者 | Gao, Tian; Yang, Qing; Guo, Xueqi; Huang, Yuqing; Zhang, Zhi; Wang, Zhixue; Liao, Mingdun; Shou, Chunhui; Zeng, Yuheng; Yan, Baojie |
| 刊名 | SOLAR ENERGY MATERIALS AND SOLAR CELLS
 |
| 出版日期 | 2019 |
| 卷号 | 200 |
| 关键词 | PASSIVATING CONTACT FILM SI EFFICIENCY RECOMBINATION SIMULATION RESISTANCE OXIDATION JUNCTIONS LIFETIME EMITTER |
| DOI | 10.1016/j.solmat.2019.109926 |
| 英文摘要 | An industrially viable TOPCon structure with both ultra-thin SiOx and n(+) - poly-Si processed by PECVD for p-type c-Si solar cells |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/17974]  |
| 专题 | 2019专题 |
| 作者单位 | 1.Ye, JC (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China. 2.Zhao, Y (reprint author), Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Tianjin 300350, Peoples R China. 3.Zeng, YH |
| 推荐引用方式 GB/T 7714 | Gao, Tian,Yang, Qing,Guo, Xueqi,et al. An industrially viable TOPCon structure with both ultra-thin SiOx and n(+) - poly-Si processed by PECVD for p-type c-Si solar cells[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2019,200. |
| APA | Gao, Tian.,Yang, Qing.,Guo, Xueqi.,Huang, Yuqing.,Zhang, Zhi.,...&Ye, Jichun.(2019).An industrially viable TOPCon structure with both ultra-thin SiOx and n(+) - poly-Si processed by PECVD for p-type c-Si solar cells.SOLAR ENERGY MATERIALS AND SOLAR CELLS,200. |
| MLA | Gao, Tian,et al."An industrially viable TOPCon structure with both ultra-thin SiOx and n(+) - poly-Si processed by PECVD for p-type c-Si solar cells".SOLAR ENERGY MATERIALS AND SOLAR CELLS 200(2019). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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