中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High-quality graphene transfer via directional etching of metal substrates

文献类型:期刊论文

作者Zhang, Xuewei; Wu, Zehao; Zheng, Haoran; Ren, Qiancheng; Zou, Zhenxing; Mei, Le; Zhang, Zilong; Xia, Yang; Lin, Cheng-Te; Zhao, Pei
刊名NANOSCALE
出版日期2019
卷号11期号:34页码:16001-16006
关键词SINGLE-CRYSTAL GRAPHENE CVD-GROWN GRAPHENE LARGE-AREA EFFICIENT TRANSFER LAYER GRAPHENE FILMS POLYMER
DOI10.1039/c9nr05315h
英文摘要High-quality graphene transfer via directional etching of metal substrates
源URL[http://ir.nimte.ac.cn/handle/174433/17978]  
专题2019专题
作者单位1.Zhao, P
2.Wang, HT (reprint author), Zhejiang Univ, Inst Appl Mech, Hangzhou 310012, Zhejiang, Peoples R China.
3.Wang, HT (reprint author), Zhejiang Univ, Ctr X Mech, Hangzhou 310012, Zhejiang, Peoples R China.
推荐引用方式
GB/T 7714
Zhang, Xuewei,Wu, Zehao,Zheng, Haoran,et al. High-quality graphene transfer via directional etching of metal substrates[J]. NANOSCALE,2019,11(34):16001-16006.
APA Zhang, Xuewei.,Wu, Zehao.,Zheng, Haoran.,Ren, Qiancheng.,Zou, Zhenxing.,...&Wang, Hongtao.(2019).High-quality graphene transfer via directional etching of metal substrates.NANOSCALE,11(34),16001-16006.
MLA Zhang, Xuewei,et al."High-quality graphene transfer via directional etching of metal substrates".NANOSCALE 11.34(2019):16001-16006.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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