Recent Advances of Quantum Conductance in Memristors
文献类型:期刊论文
作者 | Xue, Wuhong; Gao, Shuang; Shang, Jie; Yi, Xiaohui; Liu, Gang; Li, Run-Wei |
刊名 | ADVANCED ELECTRONIC MATERIALS
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出版日期 | 2019 |
卷号 | 5期号:9 |
关键词 | QUANTIZED CONDUCTANCE METALLIC NANOWIRES RESISTIVE MEMORY DEVICES NANOFILAMENTS MECHANISMS NUCLEATION PLASTICITY TRANSPORT FILAMENTS |
DOI | 10.1002/aelm.201800854 |
英文摘要 | Recent Advances of Quantum Conductance in Memristors |
源URL | [http://ir.nimte.ac.cn/handle/174433/17999] ![]() |
专题 | 2019专题 |
作者单位 | 1.Li, RW (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, CAS Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China. 2.Li, RW (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China. |
推荐引用方式 GB/T 7714 | Xue, Wuhong,Gao, Shuang,Shang, Jie,et al. Recent Advances of Quantum Conductance in Memristors[J]. ADVANCED ELECTRONIC MATERIALS,2019,5(9). |
APA | Xue, Wuhong,Gao, Shuang,Shang, Jie,Yi, Xiaohui,Liu, Gang,&Li, Run-Wei.(2019).Recent Advances of Quantum Conductance in Memristors.ADVANCED ELECTRONIC MATERIALS,5(9). |
MLA | Xue, Wuhong,et al."Recent Advances of Quantum Conductance in Memristors".ADVANCED ELECTRONIC MATERIALS 5.9(2019). |
入库方式: OAI收割
来源:宁波材料技术与工程研究所
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