中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Recent Advances of Quantum Conductance in Memristors

文献类型:期刊论文

作者Xue, Wuhong; Gao, Shuang; Shang, Jie; Yi, Xiaohui; Liu, Gang; Li, Run-Wei
刊名ADVANCED ELECTRONIC MATERIALS
出版日期2019
卷号5期号:9
关键词QUANTIZED CONDUCTANCE METALLIC NANOWIRES RESISTIVE MEMORY DEVICES NANOFILAMENTS MECHANISMS NUCLEATION PLASTICITY TRANSPORT FILAMENTS
DOI10.1002/aelm.201800854
英文摘要Recent Advances of Quantum Conductance in Memristors
源URL[http://ir.nimte.ac.cn/handle/174433/17999]  
专题2019专题
作者单位1.Li, RW (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, CAS Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China.
2.Li, RW (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China.
推荐引用方式
GB/T 7714
Xue, Wuhong,Gao, Shuang,Shang, Jie,et al. Recent Advances of Quantum Conductance in Memristors[J]. ADVANCED ELECTRONIC MATERIALS,2019,5(9).
APA Xue, Wuhong,Gao, Shuang,Shang, Jie,Yi, Xiaohui,Liu, Gang,&Li, Run-Wei.(2019).Recent Advances of Quantum Conductance in Memristors.ADVANCED ELECTRONIC MATERIALS,5(9).
MLA Xue, Wuhong,et al."Recent Advances of Quantum Conductance in Memristors".ADVANCED ELECTRONIC MATERIALS 5.9(2019).

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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