One-Transistor Memory Compatible with Si-Based Technology with Multilevel Applications
文献类型：期刊论文
| 作者 | Dai, Mingzhi; Yang, Wenwei; Li, Ming; Zhang, Lei; Huo, Changhe; Dong, Yemin; Webster, Thomas J. |
| 刊名 | ADVANCED ELECTRONIC MATERIALS
 |
| 出版日期 | 2019 |
| 卷号 | 5期号:8 |
| 关键词 | CATALYST |
| DOI | 10.1002/aelm.201900262 |
| 英文摘要 | One-Transistor Memory Compatible with Si-Based Technology with Multilevel Applications |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/18107]  |
| 专题 | 2019专题 |
| 作者单位 | 1.Dong, YM (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 201433, Peoples R China. 2.Webster, TJ (reprint author), Northeastern Univ, Dept Chem Engn, 313 Snell Engn Ctr,360 Huntington Ave, Boston, MA 02115 USA. 3.Dai, MZ (reprint author), Chinese Acad Sci, Ningbo Inst Mat & Technol Engn, 1219 Zhongguan Xi Rd, Ningbo 315201, Zhejiang, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Dai, Mingzhi,Yang, Wenwei,Li, Ming,et al. One-Transistor Memory Compatible with Si-Based Technology with Multilevel Applications[J]. ADVANCED ELECTRONIC MATERIALS,2019,5(8). |
| APA | Dai, Mingzhi.,Yang, Wenwei.,Li, Ming.,Zhang, Lei.,Huo, Changhe.,...&Webster, Thomas J..(2019).One-Transistor Memory Compatible with Si-Based Technology with Multilevel Applications.ADVANCED ELECTRONIC MATERIALS,5(8). |
| MLA | Dai, Mingzhi,et al."One-Transistor Memory Compatible with Si-Based Technology with Multilevel Applications".ADVANCED ELECTRONIC MATERIALS 5.8(2019). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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