中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation

文献类型:期刊论文

作者Yu, J. J.; Liang, L. Y.; Hu, L. X.; Duan, H. X.; Wu, W. H.; Zhang, H. L.; Gao, J. H.; Zhuge, F.; Chang, T. C.; Cao, H. T.
刊名NANO ENERGY
出版日期2019
卷号62页码:772-780
关键词PERSISTENT PHOTOCONDUCTIVITY SYNAPTIC DEVICES MEMORY PLASTICITY
DOI10.1016/j.nanoen.2019.06.007
英文摘要Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation
源URL[http://ir.nimte.ac.cn/handle/174433/18122]  
专题2019专题
作者单位1.Liang, LY
2.Cao, HT (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Div Funct Mat & Nano Devices, Ningbo 315201, Zhejiang, Peoples R China.
3.Cao, HT (reprint author), Chinese Acad Sci, Key Lab Graphene Technol & Applicat Zhejiang Prov, Ningbo 315201, Zhejiang, Peoples R China.
推荐引用方式
GB/T 7714
Yu, J. J.,Liang, L. Y.,Hu, L. X.,et al. Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation[J]. NANO ENERGY,2019,62:772-780.
APA Yu, J. J..,Liang, L. Y..,Hu, L. X..,Duan, H. X..,Wu, W. H..,...&Cao, H. T..(2019).Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation.NANO ENERGY,62,772-780.
MLA Yu, J. J.,et al."Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation".NANO ENERGY 62(2019):772-780.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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