How semiconductor transition metal dichalcogenides replaced graphene for enhancing anticorrosion
文献类型：期刊论文
| 作者 | Ding, Jiheng; Zhao, Hongran; Zhao, Xinpeng; Xu, Beiyu; Yu, Haibin |
| 刊名 | JOURNAL OF MATERIALS CHEMISTRY A
 |
| 出版日期 | 2019 |
| 卷号 | 7期号:22页码:13511-13521 |
| 关键词 | GRAPHITE OXIDE MOS2 NANOSHEETS PERFORMANCE TRANSISTORS RESISTANCE FILMS BORON |
| DOI | 10.1039/c9ta04033a |
| 英文摘要 | How semiconductor transition metal dichalcogenides replaced graphene for enhancing anticorrosion |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/18225]  |
| 专题 | 2019专题 |
| 作者单位 | Yu, HB (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Key Lab Marine Mat & Protect Technol, Key Lab Marine Mat & Related Technol, Ningbo 315201, Zhejiang, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Ding, Jiheng,Zhao, Hongran,Zhao, Xinpeng,et al. How semiconductor transition metal dichalcogenides replaced graphene for enhancing anticorrosion[J]. JOURNAL OF MATERIALS CHEMISTRY A,2019,7(22):13511-13521. |
| APA | Ding, Jiheng,Zhao, Hongran,Zhao, Xinpeng,Xu, Beiyu,&Yu, Haibin.(2019).How semiconductor transition metal dichalcogenides replaced graphene for enhancing anticorrosion.JOURNAL OF MATERIALS CHEMISTRY A,7(22),13511-13521. |
| MLA | Ding, Jiheng,et al."How semiconductor transition metal dichalcogenides replaced graphene for enhancing anticorrosion".JOURNAL OF MATERIALS CHEMISTRY A 7.22(2019):13511-13521. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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