中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Thermoelectric Properties of Pure SnSe Single Crystal Prepared by a Vapor Deposition Method

文献类型:期刊论文

作者Jin, Min; Jiang, Jun; Li, Rongbin; Wang, Xianghu; Chen, Yunxia; Chen, Yuqi; Xu, Jiayue
刊名CRYSTAL RESEARCH AND TECHNOLOGY
出版日期2019
卷号54期号:6
关键词PERFORMANCE GROWTH CHARGE
DOI10.1002/crat.201900032
英文摘要Thermoelectric Properties of Pure SnSe Single Crystal Prepared by a Vapor Deposition Method
源URL[http://ir.nimte.ac.cn/handle/174433/18251]  
专题2019专题
作者单位Jin, M (reprint author), Shanghai Dianji Univ, Coll Mat, Shanghai 201306, Peoples R China.
推荐引用方式
GB/T 7714
Jin, Min,Jiang, Jun,Li, Rongbin,et al. Thermoelectric Properties of Pure SnSe Single Crystal Prepared by a Vapor Deposition Method[J]. CRYSTAL RESEARCH AND TECHNOLOGY,2019,54(6).
APA Jin, Min.,Jiang, Jun.,Li, Rongbin.,Wang, Xianghu.,Chen, Yunxia.,...&Xu, Jiayue.(2019).Thermoelectric Properties of Pure SnSe Single Crystal Prepared by a Vapor Deposition Method.CRYSTAL RESEARCH AND TECHNOLOGY,54(6).
MLA Jin, Min,et al."Thermoelectric Properties of Pure SnSe Single Crystal Prepared by a Vapor Deposition Method".CRYSTAL RESEARCH AND TECHNOLOGY 54.6(2019).

入库方式: OAI收割

来源:宁波材料技术与工程研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。