Improving Negative-Bias-Temperature-Stress Stability for Thin-Film Transistors by Doping Mg Into ScInO Semiconductor
文献类型：期刊论文
| 作者 | Lan, Linfeng; Dai, Xingqiang; He, Changchun; Liu, Lu; Yang, Xiaobao; Liang, Lingyan; Cao, Hongtao; Peng, Junbiao |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 出版日期 | 2019 |
| 卷号 | 66期号:6页码:2620-2623 |
| 关键词 | INSTABILITY |
| DOI | 10.1109/TED.2019.2911635 |
| 英文摘要 | Improving Negative-Bias-Temperature-Stress Stability for Thin-Film Transistors by Doping Mg Into ScInO Semiconductor |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/18262]  |
| 专题 | 2019专题 |
| 作者单位 | Lan, LF (reprint author), South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Lan, Linfeng,Dai, Xingqiang,He, Changchun,et al. Improving Negative-Bias-Temperature-Stress Stability for Thin-Film Transistors by Doping Mg Into ScInO Semiconductor[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2019,66(6):2620-2623. |
| APA | Lan, Linfeng.,Dai, Xingqiang.,He, Changchun.,Liu, Lu.,Yang, Xiaobao.,...&Peng, Junbiao.(2019).Improving Negative-Bias-Temperature-Stress Stability for Thin-Film Transistors by Doping Mg Into ScInO Semiconductor.IEEE TRANSACTIONS ON ELECTRON DEVICES,66(6),2620-2623. |
| MLA | Lan, Linfeng,et al."Improving Negative-Bias-Temperature-Stress Stability for Thin-Film Transistors by Doping Mg Into ScInO Semiconductor".IEEE TRANSACTIONS ON ELECTRON DEVICES 66.6(2019):2620-2623. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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