Role of Oxygen Vacancies at the TiO2/HfO2 Interface in Flexible Oxide-Based Resistive Switching Memory
文献类型：期刊论文
| 作者 | Zhang, Rulin; Huang, Hong; Xia, Qing; Ye, Cong; Wei, Xiaodi; Wang, Jinzhao; Zhang, Li; Zhu, Li Qiang |
| 刊名 | ADVANCED ELECTRONIC MATERIALS
 |
| 出版日期 | 2019 |
| 卷号 | 5期号:5 |
| 关键词 | INDIUM-TIN-OXIDE |
| DOI | 10.1002/aelm.201800833 |
| 英文摘要 | Role of Oxygen Vacancies at the TiO2/HfO2 Interface in Flexible Oxide-Based Resistive Switching Memory |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/18336]  |
| 专题 | 2019专题 |
| 作者单位 | 1.Zhu, LQ (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Graphene Technol & Applicat Zhejiang Prov, Ningbo 315201, Zhejiang, Peoples R China. 2.Zhu, LQ (reprint author), Univ Chinese Acad Sci, Beijing 100049, Peoples R China. 3.Ye, C (reprint author), Hubei Univ, Fac Phys & Elect Sci, Hubei Key Lab Appl Math, Hubei Key Lab Ferroelect & Dielect Mat & Devices, Wuhan 430062, Hubei, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Zhang, Rulin,Huang, Hong,Xia, Qing,et al. Role of Oxygen Vacancies at the TiO2/HfO2 Interface in Flexible Oxide-Based Resistive Switching Memory[J]. ADVANCED ELECTRONIC MATERIALS,2019,5(5). |
| APA | Zhang, Rulin.,Huang, Hong.,Xia, Qing.,Ye, Cong.,Wei, Xiaodi.,...&Zhu, Li Qiang.(2019).Role of Oxygen Vacancies at the TiO2/HfO2 Interface in Flexible Oxide-Based Resistive Switching Memory.ADVANCED ELECTRONIC MATERIALS,5(5). |
| MLA | Zhang, Rulin,et al."Role of Oxygen Vacancies at the TiO2/HfO2 Interface in Flexible Oxide-Based Resistive Switching Memory".ADVANCED ELECTRONIC MATERIALS 5.5(2019). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。