中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates

文献类型:期刊论文

作者Xu, Houqiang; Jiang, Jie'an; Sheikhi, Moheb; Chen, Zhaoying; Hoo, Jason; Guo, Shiping; Guo, Wei; Sun, Haiding; Ye, Jichun
刊名SUPERLATTICES AND MICROSTRUCTURES
出版日期2019
卷号129页码:20-27
关键词SURFACE-MORPHOLOGY GAN FILMS KINETICS QUALITY TERNARY INGAN BLUE
DOI10.1016/j.spmi.2019.03.010
英文摘要Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates
源URL[http://ir.nimte.ac.cn/handle/174433/18342]  
专题2019专题
作者单位1.Sun, HD (reprint author), Univ Sci & Technol China, Sch Microelect, Hefei 230026, Anhui, Peoples R China.
2.Guo, W
3.Ye, JC (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China.
推荐引用方式
GB/T 7714
Xu, Houqiang,Jiang, Jie'an,Sheikhi, Moheb,et al. Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates[J]. SUPERLATTICES AND MICROSTRUCTURES,2019,129:20-27.
APA Xu, Houqiang.,Jiang, Jie'an.,Sheikhi, Moheb.,Chen, Zhaoying.,Hoo, Jason.,...&Ye, Jichun.(2019).Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates.SUPERLATTICES AND MICROSTRUCTURES,129,20-27.
MLA Xu, Houqiang,et al."Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates".SUPERLATTICES AND MICROSTRUCTURES 129(2019):20-27.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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