Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel Computing
文献类型：期刊论文
| 作者 | Zhu, Guodong; Chen, Wenchao; Wang, Dawei; Xie, Hao; Zhao, Zhenguo; Gao, Pingqi; Schutt-Aine, Jose; Yin, Wen-Yan |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 出版日期 | 2019 |
| 卷号 | 66期号:4页码:1747-1753 |
| 关键词 | DEVICE SIMULATION |
| DOI | 10.1109/TED.2019.2901030 |
| 英文摘要 | Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel Computing |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/18424]  |
| 专题 | 2019专题 |
| 作者单位 | 1.Chen, WC 2.Chen, WC (reprint author), ZJU UIUC Inst, Coll Informat Sci & Elect Engn, Int Campus, Haining 314400, Peoples R China. 3.Yin, WY (reprint author), Zhejiang Univ, Key Lab Adv Micronano Elect Devices & Smart Syst, Innovat Inst Electromagnet Informat & Elect Integ, Coll Informat Sci & Elect Engn, Hangzhou 310058, Zhejiang, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Zhu, Guodong,Chen, Wenchao,Wang, Dawei,et al. Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel Computing[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2019,66(4):1747-1753. |
| APA | Zhu, Guodong.,Chen, Wenchao.,Wang, Dawei.,Xie, Hao.,Zhao, Zhenguo.,...&Yin, Wen-Yan.(2019).Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel Computing.IEEE TRANSACTIONS ON ELECTRON DEVICES,66(4),1747-1753. |
| MLA | Zhu, Guodong,et al."Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel Computing".IEEE TRANSACTIONS ON ELECTRON DEVICES 66.4(2019):1747-1753. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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