An Oxide Schottky Junction Artificial Optoelectronic Synapse
文献类型：期刊论文
| 作者 | Gao, Shuang; Liu, Gang; Yang, Huali; Hu, Chao; Chen, Qilai; Gong, Guodong; Xue, Wuhong; Yi, Xiaohui; Shang, Jie; Li, Run-Wei |
| 刊名 | ACS NANO
 |
| 出版日期 | 2019 |
| 卷号 | 13期号:2页码:2634-2642 |
| 关键词 | WORK FUNCTION MEMRISTOR MEMORY MECHANISMS PLASTICITY DEVICE |
| DOI | 10.1021/acsnano.9b00340 |
| 英文摘要 | An Oxide Schottky Junction Artificial Optoelectronic Synapse |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/18577]  |
| 专题 | 2019专题 |
| 作者单位 | 1.Liu, G 2.Li, RW (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, CAS Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China. 3.Li, RW (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Gao, Shuang,Liu, Gang,Yang, Huali,et al. An Oxide Schottky Junction Artificial Optoelectronic Synapse[J]. ACS NANO,2019,13(2):2634-2642. |
| APA | Gao, Shuang.,Liu, Gang.,Yang, Huali.,Hu, Chao.,Chen, Qilai.,...&Li, Run-Wei.(2019).An Oxide Schottky Junction Artificial Optoelectronic Synapse.ACS NANO,13(2),2634-2642. |
| MLA | Gao, Shuang,et al."An Oxide Schottky Junction Artificial Optoelectronic Synapse".ACS NANO 13.2(2019):2634-2642. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。