Recommended Methods to Study Resistive Switching Devices
文献类型：期刊论文
| 作者 | Lanza, Mario; Wong, H-S Philip; Pop, Eric; Ielmini, Daniele; Strukov, Dimitri; Regan, Brian C.; Larcher, Luca; Villena, Marco A.; Yang, J. Joshua; Goux, Ludovic |
| 刊名 | ADVANCED ELECTRONIC MATERIALS
 |
| 出版日期 | 2019 |
| 卷号 | 5期号:1 |
| 关键词 | HEXAGONAL BORON-NITRIDE ALIGNED CARBON NANOTUBES SPICE COMPACT MODEL NONVOLATILE MEMORY RRAM DEVICES THIN-FILM DIELECTRIC-BREAKDOWN MEMRISTIVE BEHAVIOR PHYSICAL MODEL NANOSCALE |
| DOI | 10.1002/aelm.201800143 |
| 英文摘要 | Recommended Methods to Study Resistive Switching Devices |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/18674]  |
| 专题 | 2019专题 |
| 作者单位 | Lanza, M (reprint author), Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Inst Funct Nano & Soft Mat FUNSOM, 199 Ren Ai Rd, Suzhou 215123, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Lanza, Mario,Wong, H-S Philip,Pop, Eric,et al. Recommended Methods to Study Resistive Switching Devices[J]. ADVANCED ELECTRONIC MATERIALS,2019,5(1). |
| APA | Lanza, Mario.,Wong, H-S Philip.,Pop, Eric.,Ielmini, Daniele.,Strukov, Dimitri.,...&Shi, Yuanyuan.(2019).Recommended Methods to Study Resistive Switching Devices.ADVANCED ELECTRONIC MATERIALS,5(1). |
| MLA | Lanza, Mario,et al."Recommended Methods to Study Resistive Switching Devices".ADVANCED ELECTRONIC MATERIALS 5.1(2019). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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