Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization
文献类型：期刊论文
| 作者 | Zhong, Hai; Wen, Yan; Zhao, Yuelei; Zhang, Qiang; Huang, Qikun; Chen, Yanxue; Cai, Jianwang; Zhang, Xixiang; Li, Run-Wei; Bai, Lihui |
| 刊名 | ADVANCED FUNCTIONAL MATERIALS
 |
| 出版日期 | 2019 |
| 卷号 | 29期号:2 |
| 关键词 | ROOM-TEMPERATURE MAGNETORESISTANCE STORAGE SPINTRONICS |
| DOI | 10.1002/adfm.201806460 |
| 英文摘要 | Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/18675]  |
| 专题 | 2019专题 |
| 作者单位 | 1.Yan, SS (reprint author), Univ Jinan, Spintron Inst, Jinan 250022, Shandong, Peoples R China. 2.Tian, YF (reprint author), Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China. 3.Yan, SS |
| 推荐引用方式 GB/T 7714 | Zhong, Hai,Wen, Yan,Zhao, Yuelei,et al. Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization[J]. ADVANCED FUNCTIONAL MATERIALS,2019,29(2). |
| APA | Zhong, Hai.,Wen, Yan.,Zhao, Yuelei.,Zhang, Qiang.,Huang, Qikun.,...&Tian, Yufeng.(2019).Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization.ADVANCED FUNCTIONAL MATERIALS,29(2). |
| MLA | Zhong, Hai,et al."Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization".ADVANCED FUNCTIONAL MATERIALS 29.2(2019). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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