中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Room-temperature RF magnetron sputtering deposition of hydrogenated Ga-doped ZnO thin films on PET substrates for PDLC devices

文献类型:期刊论文

作者Zhu, Chaoting; Zhou, Tianqi; Shi, Feng; Song, Weijie; Li, Jia; Wu, Wenxuan
刊名APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
出版日期2018
卷号124期号:12
关键词ZINC-OXIDE ELECTRICAL-PROPERTIES TRANSPARENT ELECTRODES
DOI10.1007/s00339-018-2276-z
英文摘要Room-temperature RF magnetron sputtering deposition of hydrogenated Ga-doped ZnO thin films on PET substrates for PDLC devices
源URL[http://ir.nimte.ac.cn/handle/174433/18739]  
专题2019专题
作者单位Zhu, CT (reprint author), Zhejiang Pharmaceut Coll, Inst Med Instruments, Ningbo 315201, Zhejiang, Peoples R China.
推荐引用方式
GB/T 7714
Zhu, Chaoting,Zhou, Tianqi,Shi, Feng,et al. Room-temperature RF magnetron sputtering deposition of hydrogenated Ga-doped ZnO thin films on PET substrates for PDLC devices[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2018,124(12).
APA Zhu, Chaoting,Zhou, Tianqi,Shi, Feng,Song, Weijie,Li, Jia,&Wu, Wenxuan.(2018).Room-temperature RF magnetron sputtering deposition of hydrogenated Ga-doped ZnO thin films on PET substrates for PDLC devices.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,124(12).
MLA Zhu, Chaoting,et al."Room-temperature RF magnetron sputtering deposition of hydrogenated Ga-doped ZnO thin films on PET substrates for PDLC devices".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 124.12(2018).

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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