Boosting Perovskite Light-Emitting Diode Performance via Tailoring Interfacial Contact
文献类型：期刊论文
| 作者 | Zou, YT; Ban, MY; Yang, YG; Bai, S; Wu, C; Han, YJ; Wu, T; Tan, YS; Huang, Q; Gao, XY |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2018 |
| 卷号 | 10期号:28页码:24320-24326 |
| 关键词 | ORGANOMETAL HALIDE PEROVSKITE SOLAR-CELLS EFFICIENT PASSIVATION DEVICES PHOTOLUMINESCENCE FILMS |
| ISSN号 | 1944-8244 |
| DOI | 10.1021/acsami.8b07438 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Solution-processed perovskite light-emitting diodes (LEDs) have attracted wide attention in the past several years. However, the overall efficiency and stability of perovskite-based LEDs remain inferior to those of organic or quantum dot LEDs. Nonradiative charge recombination and the unbalanced charge injection are two critical factors that limit the device efficiency and operational stability of perovskite LEDs. Here, we develop a strategy to modify the interface between the hole transport layer and the perovskite emissive layer with an amphiphilic conjugated polymer of poly[(9,9-bis(3'-(N,N-dimethylamino)propy1)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN). We show evidences that PFN improves the quality of the perovskite film, which effectively suppresses nonradiative recombination. By further improving the charge injection balance rate, a green perovskite LED with a champion current efficiency of 45.2 cd/A, corresponding to an external quantum efficiency of 14.4%, is achieved. In addition, the device based on the PFN layer exhibits improved operational lifetime. Our work paves a facile way for the development of efficient and stable perovskite LEDs. |
| 语种 | 英语 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/30867]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden 2.Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, 199 Renai Rd, Suzhou 215123, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Appl Phys, SSRF, Pudong New Area, 239 Zhangheng Rd, Shanghai 201204, Peoples R China 4.Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, 199 Renai Rd, Suzhou 215123, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zou, YT,Ban, MY,Yang, YG,et al. Boosting Perovskite Light-Emitting Diode Performance via Tailoring Interfacial Contact[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10(28):24320-24326. |
| APA | Zou, YT.,Ban, MY.,Yang, YG.,Bai, S.,Wu, C.,...&Sun, BQ.(2018).Boosting Perovskite Light-Emitting Diode Performance via Tailoring Interfacial Contact.ACS APPLIED MATERIALS & INTERFACES,10(28),24320-24326. |
| MLA | Zou, YT,et al."Boosting Perovskite Light-Emitting Diode Performance via Tailoring Interfacial Contact".ACS APPLIED MATERIALS & INTERFACES 10.28(2018):24320-24326. |
入库方式： OAI收割
来源：上海应用物理研究所
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