Electronic Structures and Optical Properties of Ga Doped Single-Layer Indium Nitride
文献类型：期刊论文
| 作者 | Li, ZW; Guo, DP; Huang, GY; Tao, WL; Duan, MY |
| 刊名 | CHINESE JOURNAL OF CHEMICAL PHYSICS
 |
| 出版日期 | 2018 |
| 卷号 | 31期号:3页码:313-317 |
| 关键词 | LIGHT-EMITTING-DIODES INN TRANSITION TRANSPORT BLUE |
| ISSN号 | 1674-0068 |
| DOI | 10.1063/1674-0068/31/cjcp1711216 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Electronic structures and optical properties of single-layer In1-xGaxN are studied by employing Heyd-Scuseria-Ernzerh (HSE) method based on the first-principles. The band structure and density of states (DOS) of single-layer In1-xGaxN are calculated, and the band gap ranges from 1.8 eV to 3.8 eV as the ratio x changes, illustrating the potential for the tunability of band gap values via Ga doped. We also have investigated optical properties of single-layer In1-xGaxN such as dielectric function, refractive index and absorption coefficient, the main peak of dielectric function spectrum and the absorption edge are found to have a remarkable blue-shift as the concentration of Ga increases. Furthermore, the optical properties of single-layer In1-xGaxN are analyzed based on the band structures and DOS analysis. Such unique optical properties have profound application in nanoelectronics and optical devices. |
| 语种 | 英语 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/30930]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.Sichuan Normal Univ, Coll Phys & Elect Engn, Chengdu 610101, Sichuan, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Appl Phys, Div Interfacial Water, Shanghai 201800, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol, Shanghai 201800, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, ZW,Guo, DP,Huang, GY,et al. Electronic Structures and Optical Properties of Ga Doped Single-Layer Indium Nitride[J]. CHINESE JOURNAL OF CHEMICAL PHYSICS,2018,31(3):313-317. |
| APA | Li, ZW,Guo, DP,Huang, GY,Tao, WL,&Duan, MY.(2018).Electronic Structures and Optical Properties of Ga Doped Single-Layer Indium Nitride.CHINESE JOURNAL OF CHEMICAL PHYSICS,31(3),313-317. |
| MLA | Li, ZW,et al."Electronic Structures and Optical Properties of Ga Doped Single-Layer Indium Nitride".CHINESE JOURNAL OF CHEMICAL PHYSICS 31.3(2018):313-317. |
入库方式： OAI收割
来源：上海应用物理研究所
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