Fabricating Quasi-Free-Standing Graphene on a SiC(0001) Surface by Steerable Intercalation of Iron
文献类型：期刊论文
| 作者 | Shen, KC; Sun, HL; Hu, JP; Hu, HB; Liang, ZF; Li, HY; Zhu, ZY; Huang, YB; Kong, LY; Wang, Y |
| 刊名 | JOURNAL OF PHYSICAL CHEMISTRY C
 |
| 出版日期 | 2018 |
| 卷号 | 122期号:37页码:21484-21492 |
| 关键词 | EPITAXIAL-GRAPHENE ELECTRONIC-PROPERTIES SILICON-CARBIDE HIGH-QUALITY GROWTH SEMICONDUCTOR TRANSISTORS GRAPHITE SINGLE LAYERS |
| ISSN号 | 1932-7447 |
| DOI | 10.1021/acs.jpcc.8b06789 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Graphene has been granted with appealing attributes for new-generation electronics due to its unique electronic properties. However, the interaction between graphene and the supporting substrate substantially limits its technological application. Here, we demonstrate the transformation of epitaxial monolayer graphene on SiC(0001) into decoupled bilayer graphene using steerable iron intercalation manipulated by thermal annealing. By means of Raman scattering and photoemission measurements, we have performed an in-depth investigation of the intercalation procedure and shown the quasi-free-standing nature of the decoupled bilayer graphene afterward, as characterized by its unique structural and electronic properties. The intercalation of Fe atoms can be manipulated through temperature-driven processes after adsorption on top of the graphene layer, and this substantially modifies the interfacial interaction between the buffer layer and SiC substrate and, correspondingly, the doping level of the pristine graphene, ultimately resulting in the decoupling of buffer layer from the substrate. Although the decoupling of epitaxial graphene grown on silicon carbide has previously been a critical issue, our study highlights a feasible approach for producing high-quality quasi-free-standing graphene on SiC in a well-controlled manner, and for tuning the intrinsic electronic properties of lateral graphene/SiC lateral structure by ferromagnetic element intercalation. |
| 语种 | 英语 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/30944]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China 2.Chinese Acad Sci, Shanghai Synchrotron Radiat Facil, Key Lab Interfacial Phys & Technol, Shanghai 201204, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100200, Peoples R China 5.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 6.Chinese Acad Sci, Inst Phys, Beijing 100100, Peoples R China 7.Cent S Univ, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China 8.Norwegian Univ Sci & Technol, Dept Phys, Ctr Quantum Spintron, NO-7491 Trondheim, Norway |
| 推荐引用方式 GB/T 7714 | Shen, KC,Sun, HL,Hu, JP,et al. Fabricating Quasi-Free-Standing Graphene on a SiC(0001) Surface by Steerable Intercalation of Iron[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2018,122(37):21484-21492. |
| APA | Shen, KC.,Sun, HL.,Hu, JP.,Hu, HB.,Liang, ZF.,...&Song, F.(2018).Fabricating Quasi-Free-Standing Graphene on a SiC(0001) Surface by Steerable Intercalation of Iron.JOURNAL OF PHYSICAL CHEMISTRY C,122(37),21484-21492. |
| MLA | Shen, KC,et al."Fabricating Quasi-Free-Standing Graphene on a SiC(0001) Surface by Steerable Intercalation of Iron".JOURNAL OF PHYSICAL CHEMISTRY C 122.37(2018):21484-21492. |
入库方式： OAI收割
来源：上海应用物理研究所
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