Design of the 3.0 similar to 5.0 mu m Band Wire-Grid Polarizer with Dielectric MgF2 and Metal Al Layers
文献类型：期刊论文
| 作者 | Kong, YY; Liu, DQ; Yang, SM; Luo, HH |
| 刊名 | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
 |
| 出版日期 | 2018 |
| 卷号 | 13期号:8页码:1188-1194 |
| 关键词 | FILMS TRANSMITTANCE |
| ISSN号 | 1555-130X |
| DOI | 10.1166/jno.2018.2356 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Low refractive index magnesium fluoride (MgF2) dielectric layers with anti-reflection function were inserted between metal Al gratings and Al2O3 substrates in the form of continuous thin film and grating to construct type-I and type-II sub-wavelength wire-grid polarizers, respectively. The two types of wire-grid polarizers (type-1 and type-11) were designed to operate in the wavelength range of 3.0 similar to 5.0 Am. The structures of type-1 and type-II polarizers were optimized in terms of the substrate material, refractive index and thickness of dielectric layer using the finite-difference time-domain method. The results show that surface plasmon modes at the interface between Al gratings and Al2O3 substrate are weakened owing to the introduction of MgF2 dielectric layer, and a cavity mode in Al grating grooves begins to play a major role. In addition, equivalent refractive index of MgF2 dielectric grating is lower and MgF2 dielectric film is larger than the refractive index of ideal anti-reflection layer. Thus, MgF 2 dielectric grating has better antireflection function and higher transmittance towards the transverse magnetic polarization light. The distribution of electric field intensity indicates the existence of a cavity mode and stronger electric field intensity in the metal grating grooves of type-II. Higher TM transmittance and extinction ratio are achieved for type-11, which are obtained to be 99% and 30 dB at the wavelength of 4.0 mu m, respectively. |
| 语种 | 英语 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/31177]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201800, Peoples R China |
| 推荐引用方式 GB/T 7714 | Kong, YY,Liu, DQ,Yang, SM,et al. Design of the 3.0 similar to 5.0 mu m Band Wire-Grid Polarizer with Dielectric MgF2 and Metal Al Layers[J]. JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS,2018,13(8):1188-1194. |
| APA | Kong, YY,Liu, DQ,Yang, SM,&Luo, HH.(2018).Design of the 3.0 similar to 5.0 mu m Band Wire-Grid Polarizer with Dielectric MgF2 and Metal Al Layers.JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS,13(8),1188-1194. |
| MLA | Kong, YY,et al."Design of the 3.0 similar to 5.0 mu m Band Wire-Grid Polarizer with Dielectric MgF2 and Metal Al Layers".JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS 13.8(2018):1188-1194. |
入库方式： OAI收割
来源：上海应用物理研究所
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