Mg3+delta SbxBi2-x Family: A Promising Substitute for the State-of-the-Art n-Type Thermoelectric Materials near Room Temperature
文献类型：期刊论文
| 作者 | Shu, R; Zhou, YC; Wang, Q; Han, ZJ; Zhu, YB; Liu, Y; Chen, YX; Gu, M; Xu, W; Wang, Y |
| 刊名 | ADVANCED FUNCTIONAL MATERIALS
 |
| 出版日期 | 2019 |
| 卷号 | 29期号:4页码:— |
| 关键词 | CARRIER SCATTERING MECHANISM ZINTL COMPOUNDS BAND-STRUCTURE PERFORMANCE DEPENDENCE FIGURE MERIT GAP |
| ISSN号 | 1616-301X |
| DOI | 10.1002/adfm.201807235 |
| 文献子类 | 期刊论文 |
| 英文摘要 | The Bi2Te3-xSex family has constituted n-type state-of-the-art thermoelectric materials near room temperature (RT) for more than half a century, which dominates the active cooling and novel heat harvesting application near RT. However, the drawbacks of a brittle nature and Te-content restricts the possibility for exploring potential applications. Here, it is shown that the Mg3+delta SbxBi2-x family ((ZT)(avg) = 1.05) could be a promising substitute for the Bi2Te3-xSex family ((ZT)(avg) = 0.9-1.0) in the temperature range of 50-250 degrees C based on the comparable thermoelectric performance through a synergistic effect from the tunable bandgap using the alloy effect and the suppressible Mg-vacancy formation using an interstitial Mn dopant. The former is to shift the optimal thermoelectric performance to near RT, and the latter is helpful to partially decouple the electrical transport and thermal transport in order to get an optimal RT power factor. The positive temperature dependence of the bandgap suggests this family is also a superior medium-temperature thermoelectric material for the significantly suppressed bipolar effect. Furthermore, a two times higher mechanical toughness, compared with the Bi2Te3-xSex family, allows for a promising substitute for state-of-the-art n-type thermoelectric materials near RT. |
| 语种 | 英语 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/31709]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.AECC, Beijing Inst Aeronaut Mat, Beijing, Peoples R China; 2.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China; 3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China; 4.Shenzhen Univ, Coll Phys & Energy, Shenzhen Key Lab Adv Thin Films & Applicat, Shenzhen 518060, Peoples R China; 5.Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100049, Peoples R China; 6.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shu, R,Zhou, YC,Wang, Q,et al. Mg3+delta SbxBi2-x Family: A Promising Substitute for the State-of-the-Art n-Type Thermoelectric Materials near Room Temperature[J]. ADVANCED FUNCTIONAL MATERIALS,2019,29(4):—. |
| APA | Shu, R.,Zhou, YC.,Wang, Q.,Han, ZJ.,Zhu, YB.,...&Liu, WS.(2019).Mg3+delta SbxBi2-x Family: A Promising Substitute for the State-of-the-Art n-Type Thermoelectric Materials near Room Temperature.ADVANCED FUNCTIONAL MATERIALS,29(4),—. |
| MLA | Shu, R,et al."Mg3+delta SbxBi2-x Family: A Promising Substitute for the State-of-the-Art n-Type Thermoelectric Materials near Room Temperature".ADVANCED FUNCTIONAL MATERIALS 29.4(2019):—. |
入库方式： OAI收割
来源：上海应用物理研究所
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