中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Preparation of SiC layer with sub-micro grain structure in TRISO particles by spouted bed CVD

文献类型:期刊论文

作者Yang, X; Zhang, F; Guo, MS; Zhong, YJJ; Wang, P; Lin, J; Zhu, ZY
刊名JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
出版日期2019
卷号39期号:9页码:2839—2845
关键词COATED FUEL-PARTICLES SILICON-CARBIDE MICROSTRUCTURE PALLADIUM
ISSN号0955-2219
DOI10.1016/j.jeurceramsoc.2019.02.005
文献子类期刊论文
英文摘要The previous studies showed that the SiC layer with sub-micro grain structure can prevent fission products release more effectively. Usually, the silicon carbide (SiC) layer in TRISO (Tristructural isotropic) particles was deposited at 1500-1600 degrees C by spouted bed chemical vapor deposition (CVD) from methyltrichlorosilane in H-2 environment. It has grain size in micro scale (1-10 mu m). In this work, we proposed a novel method for preparation of sub-micro grained SiC layer by adjusting the deposition parameters. The as-prepared SiC layer had grain size about 200 nm and pure phase (beta-SiC). The fined grain SiC layer also exhibited higher mechanical property than SiC layer with larger grain size.
语种英语
源URL[http://ir.sinap.ac.cn/handle/331007/31767]  
专题上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位1.Chinese Acad Sci, Shanghai Inst Appl Phys, Ctr Excellence TMSR Energy Syst, Shanghai 201800, Peoples R China;
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Yang, X,Zhang, F,Guo, MS,et al. Preparation of SiC layer with sub-micro grain structure in TRISO particles by spouted bed CVD[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,2019,39(9):2839—2845.
APA Yang, X.,Zhang, F.,Guo, MS.,Zhong, YJJ.,Wang, P.,...&Zhu, ZY.(2019).Preparation of SiC layer with sub-micro grain structure in TRISO particles by spouted bed CVD.JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,39(9),2839—2845.
MLA Yang, X,et al."Preparation of SiC layer with sub-micro grain structure in TRISO particles by spouted bed CVD".JOURNAL OF THE EUROPEAN CERAMIC SOCIETY 39.9(2019):2839—2845.

入库方式: OAI收割

来源:上海应用物理研究所

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