Realizing high thermoelectric performance in Cu2Te alloyed Cu1.15In2.29Te4
文献类型：期刊论文
| 作者 | Li, M; Luo, Y; Cai, GM; Li, X; Li, XY; Han, ZK; Lin, XY; Sarker, D; Cui, JL |
| 刊名 | JOURNAL OF MATERIALS CHEMISTRY A
 |
| 出版日期 | 2019 |
| 卷号 | 7期号:5页码:2360—2367 |
| 关键词 | THERMAL-CONDUCTIVITY SOLID-SOLUTIONS POWER-FACTOR CUINTE2 ENHANCEMENT SCATTERING ELECTRON VACANCY CHALCOPYRITE BAND |
| ISSN号 | 2050-7488 |
| DOI | 10.1039/c8ta10741f |
| 文献子类 | 期刊论文 |
| 英文摘要 | Controlling the chemical and physical structure at the atomic level is of paramount importance for decreasing the thermal conductivity by enhancing phonon scattering in thermoelectric materials. Additional enhancement in the figure of merit (ZT) can be achieved by improving the electron transport properties. Cu-deficient ternary I-III-VI compounds have received increasing attention because they can easily form solid solutions and thereby their thermoelectric performance can be readily engineered. In this work, we present a novel thermoelectric compound Cu1.15In2.29Te4 with the dimensionless figure of merit ZT similar to 1.0 through alloying with Cu2Te. The enhanced ZT value is mainly attributed to the ultralow lattice thermal conductivity (kappa(L) = 0.24 W K-1 m(-1) at 825 K), caused by a pronounced local lattice disorder as a result of the interstitial residing of extra Te. Density functional theory based first-principles calculations further elucidate that the creation of the resonant states at the Fermi level and impurity levels near the valence band edge has increased the effective mass and carrier concentration, resulting in the improved electrical properties. Moreover, the localized modes of the Te interstitial defects hybridize with the acoustic modes of stoichiometric In and Te and lead to the enhanced scattering of the thermal phonons resulting in the significantly low kL. The above findings substantiate that appropriate doping of Cu2Te in the newly developed Cu1.15In2.29Te4 compound can effectively manipulate both electron and phonon transport and thereby promises high thermoelectric performance. |
| 语种 | 英语 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/31790]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.China Univ Min & Technol, Sch Mat Sci & Engn, Xuzhou 221116, Jiangsu, Peoples R China; 2.Ningbo Univ Technol, Sch Mat & Chem Engn, Ningbo 315016, Zhejiang, Peoples R China; 3.Chinese Acad Sci, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol, Shanghai 201800, Peoples R China; 4.Duke Univ, Dept Mech Engn & Mat Sci, Durham, NC 27708 USA; 5.Max Planck Gesell, Fritz Haber Inst, Theory Dept, Faradayweg 4-6, D-14195 Berlin, Germany 6.Cent S Univ, Sch Mat Sci & Engn, Changsha 410083, Hunan, Peoples R China; 7.Chinese Acad Sci, Shanghai Inst Appl Phys, Div Interfacial Water, Shanghai 201800, Peoples R China; |
| 推荐引用方式 GB/T 7714 | Li, M,Luo, Y,Cai, GM,et al. Realizing high thermoelectric performance in Cu2Te alloyed Cu1.15In2.29Te4[J]. JOURNAL OF MATERIALS CHEMISTRY A,2019,7(5):2360—2367. |
| APA | Li, M.,Luo, Y.,Cai, GM.,Li, X.,Li, XY.,...&Cui, JL.(2019).Realizing high thermoelectric performance in Cu2Te alloyed Cu1.15In2.29Te4.JOURNAL OF MATERIALS CHEMISTRY A,7(5),2360—2367. |
| MLA | Li, M,et al."Realizing high thermoelectric performance in Cu2Te alloyed Cu1.15In2.29Te4".JOURNAL OF MATERIALS CHEMISTRY A 7.5(2019):2360—2367. |
入库方式： OAI收割
来源：上海应用物理研究所
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