Thickness effects on the epitaxial strain states and phase transformations in (001)-VO2/TiO2 thin films
文献类型：期刊论文
| 作者 | Yang, YJ; Mao, XL; Yao, YX; Huang, HL; Lu, YL; Luo, LB; Zhang, XM; Yin, GZ; Yang, TY; Gao, XY |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2019 |
| 卷号 | 125期号:8页码:— |
| 关键词 | METAL-INSULATOR-TRANSITION VANADIUM DIOXIDE VO2 SUPPRESSION |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.5049551 |
| 文献子类 | 期刊论文 |
| 英文摘要 | The thickness-dependent epitaxial strains and phase transformations of (001)-VO2/TiO2 thin films are investigated systematically in a wide thickness range (from 9 to 150 nm). Under a thickness of 18 nm, the tensile in-plane strain is maintained, owing to the good lattice and the symmetry matching between the VO2 thin film and the TiO2 substrate, but the compressive out-of-plane epitaxial strain is gradually relaxed. The epitaxial strains co-stabilize the rutile phase (R phase) in this thickness range. Beyond a thickness of 18nm, the out-of-plane lattice c exhibits a sudden elongation and reaches the bulk level of 2.8528 angstrom at a thickness of 20 nm, which indicates a structural phase transition (SPT). A further increase of the film thickness results in another new phase (tetragonal-like or T-like) with lattice distortion, which maintains the tetragonal symmetry in the thickness range of 20 to 55 nm. From a thickness of 60 nm, the monoclinic phase (M1 phase) appears, which indicates another SPT from T-like to the monoclinic M1 phase. This SPT is more favorable energetically, owing to the assistance of the strain relaxation in the thicker films. Additionally, the metal-insulator transition temperature positively increases as a function of the out-of-plane strain. This result is consistent with the fact that the tensile strain along the c(R) axis (V-V atom chain) is conducive for the stabilized insulating phase. This work highlights strain engineering as a crucial avenue for manipulating the phase transformations and properties in the correlated electron system. Published by AIP Publishing. |
| 语种 | 英语 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/31875]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China; 2.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China; 3.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, YJ,Mao, XL,Yao, YX,et al. Thickness effects on the epitaxial strain states and phase transformations in (001)-VO2/TiO2 thin films[J]. JOURNAL OF APPLIED PHYSICS,2019,125(8):—. |
| APA | Yang, YJ.,Mao, XL.,Yao, YX.,Huang, HL.,Lu, YL.,...&Gao, XY.(2019).Thickness effects on the epitaxial strain states and phase transformations in (001)-VO2/TiO2 thin films.JOURNAL OF APPLIED PHYSICS,125(8),—. |
| MLA | Yang, YJ,et al."Thickness effects on the epitaxial strain states and phase transformations in (001)-VO2/TiO2 thin films".JOURNAL OF APPLIED PHYSICS 125.8(2019):—. |
入库方式： OAI收割
来源：上海应用物理研究所
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