Ultra-high-density silicon nanocone arrays with sharp tips by Ar+ sputtering at low temperature
文献类型：期刊论文
| 作者 | Wang, HJ; Li, QT; Wu, XJ |
| 刊名 | SURFACE ENGINEERING
 |
| 出版日期 | 2019 |
| 卷号 | 35期号:1页码:54—58 |
| 关键词 | FIELD-EMISSION PROPERTIES ROOM-TEMPERATURE ION-BOMBARDMENT CONE ARRAYS FABRICATION PLASMA FILMS MICROTIPS PILLARS MASKS |
| ISSN号 | 0267-0844 |
| DOI | 10.1080/02670844.2018.1454997 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Ultra-high-density silicon nanocone arrays with sharp tips have been fabricated by Ar+ sputtering at low temperatures. The investigation of SEM and AFM indicates that with an increasing substrate temperature from room temperature, 200 to 400 degrees C, the density of silicon nanocone increases from 1-2 x 10(9), 3-4 x 10(9) to 1-2 x 10(10) cm(-2), respectively. The rooter diameter of the cones decreases from 120-150 to 40-50 nm and the tip angle of cones decreases from 32-36 degrees to 20-26 degrees. As predicted by the Bradley-Harper theory, the ripple wavelength decreases with substrate temperature during the carbon ripple formation process, which leads to an increase in the silicon nanocone density and a decrease in the silicon nanocone rooter diameter. |
| 语种 | 英语 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/31892]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.Nanjing Inst Ind Technol, Sch Mech Engn, Nanjing 210023, Jiangsu, Peoples R China; 2.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, HJ,Li, QT,Wu, XJ. Ultra-high-density silicon nanocone arrays with sharp tips by Ar+ sputtering at low temperature[J]. SURFACE ENGINEERING,2019,35(1):54—58. |
| APA | Wang, HJ,Li, QT,&Wu, XJ.(2019).Ultra-high-density silicon nanocone arrays with sharp tips by Ar+ sputtering at low temperature.SURFACE ENGINEERING,35(1),54—58. |
| MLA | Wang, HJ,et al."Ultra-high-density silicon nanocone arrays with sharp tips by Ar+ sputtering at low temperature".SURFACE ENGINEERING 35.1(2019):54—58. |
入库方式： OAI收割
来源：上海应用物理研究所
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