InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency
文献类型：期刊论文
| 作者 | Zhou Yi; Lu Qi; Chai Xuliang; Xu Zhicheng; Chen Jianxin; Krier Anthony; He Li |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2019 |
| 卷号 | 114期号:25页码:253507 |
| 关键词 | AUGER RECOMBINATION |
| DOI | 10.1063/1.5098957 |
| 英文摘要 | In this work, 2-stage and 5-stage mid-infrared superlattice interband cascade light emitting diodes (ICLEDs) were fabricated and studied at different temperatures. The ICLEDs were composed of InAs/GaAsSb active regions, InAs/AlAsSb injection regions, and GaAsSb/AlAsSb tunneling regions. The devices exhibited high output power and very low series resistance, indicating efficient carrier blocking and tunneling in the designed structure. Radiances of 0.73W/cm(2) sr and 0.38W/cm(2) sr were achieved at 300K for the 5-stage and 2-stage ICLEDs, respectively. With an output power of 3.56 mW, the wall-plug efficiency of the 5-stage ICLED reached 0.5% at 80K, under an injection current of 350mA. The efficiency was largely maintained in the same range with increasing current injection. The results showed that ICLEDs have great potential for mid-infrared light emitting diode applications requiring large output power and high wall-plug efficiency. |
| WOS记录号 | WOS:000474433800024 |
| 源URL | [http://202.127.2.71:8080/handle/181331/12367]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Zhou Yi,Lu Qi,Chai Xuliang,et al. InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency[J]. APPLIED PHYSICS LETTERS,2019,114(25):253507. |
| APA | Zhou Yi.,Lu Qi.,Chai Xuliang.,Xu Zhicheng.,Chen Jianxin.,...&He Li.(2019).InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency.APPLIED PHYSICS LETTERS,114(25),253507. |
| MLA | Zhou Yi,et al."InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency".APPLIED PHYSICS LETTERS 114.25(2019):253507. |
入库方式： OAI收割
来源：上海技术物理研究所
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