中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The Novel of n-p-n Type Transition in the ZnSe/Ge Heterojunction Nanowire: First Principles Study

文献类型:期刊论文

作者Huang Jiujun; Xing Huaizhong; Huang Yan(第三作者); Wang Chunrui; Chen Xiaoshuang
刊名JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
出版日期2019
卷号19期号:9页码:5847-5853
关键词n-p Type Transition ZnSe/Ge Nanowire Electronic Structure Property
DOI10.1166/jnn.2019.16499
英文摘要The structure and electronic properties of the bare and hydrogen-passivated ZnSe/Ge bi-axial nanowires have been calculated by means of the first principle calculation based on density functional theory. Five different types of nanowires with different concentrations all grown along [1 1 1] direction are considered. Band gaps of bare ZnSe/Ge bi-axial nanowires are smaller than those of hydrogen-passivated ZnSe/Ge nanowires at the same doping concentrations. Both the bare and hydrogen-passivated nanowires have lower band gap at a higher Ge components. It is shown detailedly that with increasing of Ge doping concentrations, the main sources of conduction band minimum and valence band maximum of nanowires varied from the p-state of Se and Ge to the p-state of Ge. It is found clearly that there is a transition from the n-type to the p-type characteristics at the doping concentration 0.4211. Whereas, when the Ge composition is increased to 0.8421, the nanowires also have a transition from the p-type to the n-type characteristics. In addition, the structural stability and the cohesive energies of ZnSe/Ge bi-coaxial nanowires are changed obviously with different Ge components. The results offer efficiently guidance to explore their potential applications in photoelectronics.
WOS记录号WOS:463891600061
源URL[http://202.127.2.71:8080/handle/181331/12377]  
专题上海技术物理研究所_上海技物所
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Huang Jiujun,Xing Huaizhong,Huang Yan,et al. The Novel of n-p-n Type Transition in the ZnSe/Ge Heterojunction Nanowire: First Principles Study[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2019,19(9):5847-5853.
APA Huang Jiujun,Xing Huaizhong,Huang Yan,Wang Chunrui,&Chen Xiaoshuang.(2019).The Novel of n-p-n Type Transition in the ZnSe/Ge Heterojunction Nanowire: First Principles Study.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,19(9),5847-5853.
MLA Huang Jiujun,et al."The Novel of n-p-n Type Transition in the ZnSe/Ge Heterojunction Nanowire: First Principles Study".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 19.9(2019):5847-5853.

入库方式: OAI收割

来源:上海技术物理研究所

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