中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Raman spectroscopic determination of hole concentration in undoped GaAsBi

文献类型:期刊论文

作者Zhu Sixin; Qiu Weiyang; Wang Han; Lin Tie; Chen Pingping; Wang Xingjun
刊名SEMICONDUCTOR SCIENCE AND TECHNOLOGY
出版日期2019
卷号34期号:1页码:15008
关键词GaAsBi Raman spectroscopy LO-phonon-plasmon-modes Hole density Hall measurements
DOI10.1088/1361-6641/aaef02
英文摘要Raman spectra of undoped GaAs1-xBix (0 < x < 0.037) grown on GaAs by molecular beam epitaxy were investigated. With an increase of Bi component, we find that the longitudinal optical phonon-hole-plasmon-coupled (LOPC) mode first appears in the vicinity of the unscreened longitudinal optical (ULO) phonon frequency, and then shifts towards the transverse optical (TO) phonon frequency. A new vibrational mode (similar to 287 cm(-1)) between the TO and the ULO phonons was verified by use of low temperature polarized Raman measurement and the corresponding scattering intensities are found to be linearly proportional to the composition of Bi in GaAsBi. The hole concentrations determined by using the LOPC/ULO Raman intensities ratio increase from similar to 6.5 x 10(16) to similar to 2.8 x 10(17) cm(-3) with increased Bi content and the measured results are in agreement with Hall measurements. Furthermore, the influence of excitation laser power on the estimation of the hole densities is discussed with the help of power dependent Raman spectroscopy.
WOS记录号WOS:451438400002
源URL[http://202.127.2.71:8080/handle/181331/12385]  
专题上海技术物理研究所_上海技物所
推荐引用方式
GB/T 7714
Zhu Sixin,Qiu Weiyang,Wang Han,et al. Raman spectroscopic determination of hole concentration in undoped GaAsBi[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2019,34(1):15008.
APA Zhu Sixin,Qiu Weiyang,Wang Han,Lin Tie,Chen Pingping,&Wang Xingjun.(2019).Raman spectroscopic determination of hole concentration in undoped GaAsBi.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,34(1),15008.
MLA Zhu Sixin,et al."Raman spectroscopic determination of hole concentration in undoped GaAsBi".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 34.1(2019):15008.

入库方式: OAI收割

来源:上海技术物理研究所

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