Raman spectroscopic determination of hole concentration in undoped GaAsBi
文献类型：期刊论文
| 作者 | Zhu Sixin; Qiu Weiyang; Wang Han; Lin Tie; Chen Pingping; Wang Xingjun |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2019 |
| 卷号 | 34期号:1页码:15008 |
| 关键词 | GaAsBi Raman spectroscopy LO-phonon-plasmon-modes Hole density Hall measurements |
| DOI | 10.1088/1361-6641/aaef02 |
| 英文摘要 | Raman spectra of undoped GaAs1-xBix (0 < x < 0.037) grown on GaAs by molecular beam epitaxy were investigated. With an increase of Bi component, we find that the longitudinal optical phonon-hole-plasmon-coupled (LOPC) mode first appears in the vicinity of the unscreened longitudinal optical (ULO) phonon frequency, and then shifts towards the transverse optical (TO) phonon frequency. A new vibrational mode (similar to 287 cm(-1)) between the TO and the ULO phonons was verified by use of low temperature polarized Raman measurement and the corresponding scattering intensities are found to be linearly proportional to the composition of Bi in GaAsBi. The hole concentrations determined by using the LOPC/ULO Raman intensities ratio increase from similar to 6.5 x 10(16) to similar to 2.8 x 10(17) cm(-3) with increased Bi content and the measured results are in agreement with Hall measurements. Furthermore, the influence of excitation laser power on the estimation of the hole densities is discussed with the help of power dependent Raman spectroscopy. |
| WOS记录号 | WOS:451438400002 |
| 源URL | [http://202.127.2.71:8080/handle/181331/12385]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Zhu Sixin,Qiu Weiyang,Wang Han,et al. Raman spectroscopic determination of hole concentration in undoped GaAsBi[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2019,34(1):15008. |
| APA | Zhu Sixin,Qiu Weiyang,Wang Han,Lin Tie,Chen Pingping,&Wang Xingjun.(2019).Raman spectroscopic determination of hole concentration in undoped GaAsBi.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,34(1),15008. |
| MLA | Zhu Sixin,et al."Raman spectroscopic determination of hole concentration in undoped GaAsBi".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 34.1(2019):15008. |
入库方式： OAI收割
来源：上海技术物理研究所
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