Template-free electrodeposition of SnS nanotubes and their photoelectrochemical properties
文献类型：期刊论文
| 作者 | Cao Meng; Yao Kefeng; Guan Yongsheng; Shi Haozhi; Yang Weiguang; Huang Jian; sun yan; Hao Jiaming; Wang Linjun; Shen Yue |
| 刊名 | MATERIALS LETTERS
 |
| 出版日期 | 2019 |
| 卷号 | 250期号:1页码:186-188 |
| 关键词 | Electrochemical deposition Nanotubes Nanocrystalline materials Photoelectrochemical characterization Energy storage and conversion Solar energy materials |
| DOI | 10.1016/j.matlet.2019.05.011 |
| 英文摘要 | In this paper, SnS nanotubes are firstly prepared in acidic solution by template free electrodeposition method at room temperature. The morphological evolution and photoelectrochemical properties of SnS nanotubes are investigated. X-ray diffraction (XRD), energy dispersive X-ray spectrometry (EDS) and Raman spectra measurements examine the phase purities of deposited SnS thin films. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterizations indicate morphological properties of SnS nanotubes. The band-gap of SnS nanotubes is confirmed by UV-Vis-NIR diffuse reflection spectra. The photoelectrochemical measurements show that the photocurrent density of FTO/SnS nanotubes is about 31 mu A/cm(2) and maximum IPCE value of SnS nanotubes is 7.4%. (C) 2019 Elsevier B.V. All rights reserved. |
| WOS记录号 | WOS:000469337700047 |
| 源URL | [http://202.127.2.71:8080/handle/181331/12389]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Cao Meng,Yao Kefeng,Guan Yongsheng,et al. Template-free electrodeposition of SnS nanotubes and their photoelectrochemical properties[J]. MATERIALS LETTERS,2019,250(1):186-188. |
| APA | Cao Meng.,Yao Kefeng.,Guan Yongsheng.,Shi Haozhi.,Yang Weiguang.,...&Dai Ning.(2019).Template-free electrodeposition of SnS nanotubes and their photoelectrochemical properties.MATERIALS LETTERS,250(1),186-188. |
| MLA | Cao Meng,et al."Template-free electrodeposition of SnS nanotubes and their photoelectrochemical properties".MATERIALS LETTERS 250.1(2019):186-188. |
入库方式： OAI收割
来源：上海技术物理研究所
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