Liquid phase epitaxy growth and photoluminescence of InAs(1-x-y)Sb(x)P(y)epilayer
文献类型：期刊论文
| 作者 | Xie Hao; Lin Hongyu; Wang Yang; Lu Hongbo; sun yan; Hao Jiaming; Hu Shuhong; Dai Ning |
| 刊名 | MATERIALS RESEARCH EXPRESS
 |
| 出版日期 | 2019 |
| 卷号 | 6期号:8页码:85912 |
| 关键词 | semiconducting quaternary compounds liquid phase epitaxy high resolution x-ray diffraction Room temperature photoluminescence |
| DOI | 10.1088/2053-1591/ab2434 |
| 英文摘要 | An investigation was made into the liquid phase epitaxy growth and photoluminescence properties of InAs1-x-ySbxPy epilayers. Details of the growth conditions and x-ray analysis were given, together with photoluminescence (PL) spectra measured at room temperature (RT). RT PL results indicate the good optical quality of InAs1-x-ySbxPy epilayer. InAs1-x-ySbxPy alloy with P content of 0.27 has a band gap of 0.48 eV that could be suitable for barrier layer in device grown by LPE. |
| WOS记录号 | WOS:000470233500001 |
| 源URL | [http://202.127.2.71:8080/handle/181331/12391]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Xie Hao,Lin Hongyu,Wang Yang,et al. Liquid phase epitaxy growth and photoluminescence of InAs(1-x-y)Sb(x)P(y)epilayer[J]. MATERIALS RESEARCH EXPRESS,2019,6(8):85912. |
| APA | Xie Hao.,Lin Hongyu.,Wang Yang.,Lu Hongbo.,sun yan.,...&Dai Ning.(2019).Liquid phase epitaxy growth and photoluminescence of InAs(1-x-y)Sb(x)P(y)epilayer.MATERIALS RESEARCH EXPRESS,6(8),85912. |
| MLA | Xie Hao,et al."Liquid phase epitaxy growth and photoluminescence of InAs(1-x-y)Sb(x)P(y)epilayer".MATERIALS RESEARCH EXPRESS 6.8(2019):85912. |
入库方式： OAI收割
来源：上海技术物理研究所
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