Integration of BaTiO3/CoFe2O4 multiferroic heterostructure on GaN semiconductor
文献类型：期刊论文
| 作者 | Li, Guanjie; Li, Xiaomin; Zhu, Qiuxiang; Zhao, Junliang; Gao, Xiangdong |
| 刊名 | CRYSTENGCOMM
 |
| 出版日期 | 2019-11-21 |
| 卷号 | 21期号:43页码:6545 |
| ISSN号 | 1466-8033 |
| DOI | 10.1039/c9ce00932a |
| 文献子类 | Article |
| 英文摘要 | Epitaxial integration of BaTiO3 (BTO)/CoFe2O4 (CFO) multiferroic heterostructure directly on GaN semiconductor was demonstrated using pulsed laser deposition. The domain matching epitaxy mechanism was revealed to be (111)[110] BTO//(111)[110] CFO//(0002)[1120] GaN. Spinel CFO thin films with a layer-by-layer growth mode on GaN not only served as the ferrimagnetic functional layer, but also as a buffer layer, inducing an epitaxial growth of perovskite BTO ferroelectric thin films on wurtzite GaN by greatly reducing lattice mismatch at the BTO/GaN interface. The designed BTO/CFO/GaN heterostructure displayed high crystallinity, dense microstructure and good interfacial state. More importantly, good ferroelectric properties for the BTO layer with a remanent polarization of 5.5 mu C cm(-2) and magnetic properties for the CFO layer with a saturation magnetization of 169 emu cm(-3) at room temperature were also demonstrated. Thus, the epitaxial integration of high performance BTO/CFO multiferroic heterostructure with GaN could add more functional degrees of freedom for designing advanced microelectronic devices on a GaN semiconductor platform. |
| WOS研究方向 | Chemistry ; Crystallography |
| 语种 | 英语 |
| 出版者 | ROYAL SOC CHEMISTRY |
| 源URL | [http://ir.sic.ac.cn/handle/331005/26723]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Li, Guanjie,Li, Xiaomin,Zhu, Qiuxiang,et al. Integration of BaTiO3/CoFe2O4 multiferroic heterostructure on GaN semiconductor[J]. CRYSTENGCOMM,2019,21(43):6545. |
| APA | Li, Guanjie,Li, Xiaomin,Zhu, Qiuxiang,Zhao, Junliang,&Gao, Xiangdong.(2019).Integration of BaTiO3/CoFe2O4 multiferroic heterostructure on GaN semiconductor.CRYSTENGCOMM,21(43),6545. |
| MLA | Li, Guanjie,et al."Integration of BaTiO3/CoFe2O4 multiferroic heterostructure on GaN semiconductor".CRYSTENGCOMM 21.43(2019):6545. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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