中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Bandgap trimming and optical properties of Si3N4:Al microbelt phosphors for warm white light-emitting diodes

文献类型:期刊论文

作者Shen, Dongyi; Shao, Yiran; Zhu, Yingchun
刊名CRYSTENGCOMM
出版日期2019-11-21
卷号21期号:43页码:6566
ISSN号1466-8033
DOI10.1039/c9ce01486a
文献子类Article
英文摘要Si3N4:Al microbelts with tunable bandgap energy and resultant yellow-orange phosphors are prepared through a facile direct nitridation method. The bandgap energy of Si3N4:Al microbelts has been gradually trimmed from 2.58 eV to 2.67, 2.74 and 2.85 eV by regulating the Si/Al molar ratio from 1000 : 1 to 50 : 1. Si3N4:Al:Eu phosphors display a wide emission ranging from 500 to 800 nm when excited by a 450 nm blue LED light source. The crystal structure of Si3N4:Al microbelts is of the alpha-Si3N4 phase as characterized by X-ray diffraction, high-resolution TEM and crystal models. Si3N4:Al microbelts grow along the (012) stacking direction in a low doping concentration case and grow along the (011) stacking direction in a high doping concentration case. Theoretical calculation results show that Al prefers to occupy the low energy interstitial sites in the (012) plane. There are more substitutional sites in the (011) plane occupied by Al in the high doping concentration case with increasing the bandgap energy of Si3N4:Al. Warm white light emission has been achieved by precoating Si3N4:Al:Eu phosphors onto a blue LED chip, whose correlated color temperature (CCT) can be tailored from 3000 K to 6500 K by altering the phosphor amount, indicating a promising potential application of Si3N4:Al:Eu phosphors in warm white LEDs.
WOS研究方向Chemistry ; Crystallography
语种英语
出版者ROYAL SOC CHEMISTRY
源URL[http://ir.sic.ac.cn/handle/331005/26724]  
专题中国科学院上海硅酸盐研究所
推荐引用方式
GB/T 7714
Shen, Dongyi,Shao, Yiran,Zhu, Yingchun. Bandgap trimming and optical properties of Si3N4:Al microbelt phosphors for warm white light-emitting diodes[J]. CRYSTENGCOMM,2019,21(43):6566.
APA Shen, Dongyi,Shao, Yiran,&Zhu, Yingchun.(2019).Bandgap trimming and optical properties of Si3N4:Al microbelt phosphors for warm white light-emitting diodes.CRYSTENGCOMM,21(43),6566.
MLA Shen, Dongyi,et al."Bandgap trimming and optical properties of Si3N4:Al microbelt phosphors for warm white light-emitting diodes".CRYSTENGCOMM 21.43(2019):6566.

入库方式: OAI收割

来源:上海硅酸盐研究所

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