K-x[Bi4-xMNxS6], Design of a Highly Selective Ion Exchange Material and Direct Gap 2D Semiconductor
文献类型：期刊论文
| 作者 | Wang, Ruiqi; Chen, Haijie; Mao, Yi; Hadar, Ido; Bu, Kejun; Zhang, Xian; Pan, Jie; Gu, Yuhao; Guo, Zhongnan; Huang, Fuqiang |
| 刊名 | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
 |
| 出版日期 | 2019-10-23 |
| 卷号 | 141期号:42页码:16903 |
| ISSN号 | 0002-7863 |
| DOI | 10.1021/jacs.9b08674 |
| 文献子类 | Article |
| 英文摘要 | Layered sulfides with high selectivity for binding heavy metal ions and radionuclide ions are promising materials in effluent treatment and water purification. Here we present a rationally designed layered sulfide K-x[Bi4-xMnxS6] (x = 1.28) deriving from the Bi2Se3-structure type by targeted substitution to generate quintuple [Bi4-xMnxS6](x-) layers and K+ cations between them. The material has dual functionality: it is an attractive semiconductor with a bandgap of 1.40 eV and also an environmental remediation ion-exchange material. The compound is paramagnetic, and optical adsorption spectroscopy and DFT electronic structure calculations reveal that it possesses a direct band gap and a work function of 5.26 eV. The K+ ions exchange readily with alkali or alkaline-earth ions (Rb+, Cs+, and Sr2+) or soft ions (Pb2+, Cd2+, Cr3+, and Zn2+). Furthermore, when the ions are depleted the Mn2+ ions in the Bi2Se3-type slabs can also be replaced by soft ions, achieving large adsorption capacities. The ion exchange reactions of K-x[Bi4-xMnxS6] can be used to create new materials of the type M-x[Bi4-xMnxS6] in a low temperature kinetically controlled manner with significantly different electronic structures. The K-x[Bi4-xMnxS6] (x = 1.28) exhibits efficient capture of Cd2+ and Pb2+ ions with high distribution coefficient, K-d (10(7) mL/g), and exchange capacities of 221.2 and 342.4 mg/g, respectively. The material exhibits excellent capacities even in high concentration of competitive ions and over a broad pH range (2.5-11.0). The results highlight the promise of the K-x[Bi4-xMnxS6] (x = 1.28) phase to serve not only as a highly selective adsorbent for industrial and nuclear wastewater but also as a magnetic 2D semiconductor for optoelectronic applications. |
| WOS研究方向 | Chemistry |
| 语种 | 英语 |
| 出版者 | AMER CHEMICAL SOC |
| 源URL | [http://ir.sic.ac.cn/handle/331005/26761]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Wang, Ruiqi,Chen, Haijie,Mao, Yi,et al. K-x[Bi4-xMNxS6], Design of a Highly Selective Ion Exchange Material and Direct Gap 2D Semiconductor[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2019,141(42):16903. |
| APA | Wang, Ruiqi.,Chen, Haijie.,Mao, Yi.,Hadar, Ido.,Bu, Kejun.,...&Kanatzidis, Mercouri G..(2019).K-x[Bi4-xMNxS6], Design of a Highly Selective Ion Exchange Material and Direct Gap 2D Semiconductor.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,141(42),16903. |
| MLA | Wang, Ruiqi,et al."K-x[Bi4-xMNxS6], Design of a Highly Selective Ion Exchange Material and Direct Gap 2D Semiconductor".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 141.42(2019):16903. |
入库方式： OAI收割
来源：上海硅酸盐研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。