Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge
文献类型：期刊论文
| 作者 | Xu, Meng; Yan, Jian-Min; Guo, Lei; Wang, Hui; Xu, Zhi-Xue; Yan, Ming-Yuan; Lu, Yun-Long; Gao, Guan-Yin; Li, Xiao-Guang; Luo, Hao-Su |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2019-09-04 |
| 卷号 | 11期号:35页码:32449 |
| ISSN号 | 1944-8244 |
| 关键词 | ferroelectric field effect ferroelectric single crystal electronic properties wide-band-gap oxide semiconductors films magnetoresistance |
| DOI | 10.1021/acsami.9b07967 |
| 文献子类 | Article |
| 英文摘要 | A series of Cr-doped In2-xCrxO3 (ICO) semiconductor thin films were epitaxially grown on (111)-oriented 0.71Pb(Mg1/3Nb2/3)O-3-0.29PbTiO(3) (PMN-0.29PT) single-crystal substrates by the pulsed laser deposition. Upon the application of an electric field to the PMN-0.29PT substrate along the thickness direction, we realized in situ, reversible, and nonvolatile control of the electronic properties and Fermi level of the films, which are manifested by abundant physical phenomena such as the n-type to p-type trans- formation, metal-semiconductor transition, metal-insulator transition, crossover of the magnetoresistance (MR) from negative to positive, and a large nonvolatile on-and-off ratio of 5.5 X 10(4)% at room temperature. We also strictly disclose that both the sign and the magnitude of MR are determined by the electron carrier density of ICO films, which could modify the s-d exchange interaction and weak localization effect. Our results demonstrate that the ferroelectric gating approach using PMN-PT can be utilized to gain deeper insight into the carrier-density-related electronic properties of In2O3-based semiconductors and provide a simple and energy efficient way to construct multifunctional devices which can utilize the unique properties of composite materials. |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science |
| 语种 | 英语 |
| 出版者 | AMER CHEMICAL SOC |
| 源URL | [http://ir.sic.ac.cn/handle/331005/26852]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Xu, Meng,Yan, Jian-Min,Guo, Lei,et al. Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge[J]. ACS APPLIED MATERIALS & INTERFACES,2019,11(35):32449. |
| APA | Xu, Meng.,Yan, Jian-Min.,Guo, Lei.,Wang, Hui.,Xu, Zhi-Xue.,...&Zheng, Ren-Kui.(2019).Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge.ACS APPLIED MATERIALS & INTERFACES,11(35),32449. |
| MLA | Xu, Meng,et al."Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge".ACS APPLIED MATERIALS & INTERFACES 11.35(2019):32449. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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