Band and Phonon Engineering for Thermoelectric Enhancements of Rhombohedral GeTe
文献类型：期刊论文
| 作者 | Liu, Hongxia; Zhang, Xinyue; Li, Juan; Bu, Zhonglin; Meng, Xiang; Ang, Ran; Li, Wen |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2019-08-28 |
| 卷号 | 11期号:34页码:30756 |
| ISSN号 | 1944-8244 |
| 关键词 | thermoelectric rhombohedral GeTe band engineering phonon engineering average zT |
| DOI | 10.1021/acsami.9b07455 |
| 文献子类 | Article |
| 英文摘要 | Rhombohedral GeTe can be approximated as the directional distortion of the cubic GeTe along [111]. Such a symmetry-breaking of the crystal structure results in an opposite arrangement in energy of the L and Sigma valence bands, and a split of them into 3L+1Z and 6 Sigma+6 eta, respectively. This enables a manipulation of the overall band degeneracy for thermoelectric enhancements through a precise control of the degree of crystal structure deviating from a cubic structure for the alignment of the split bands. Here, we show the effect of AgBiSe2-alloying on the crystal structure as well as thermoelectric transport properties of rhombohedral GeTe. AgBiSe2 alloying is found to not only finely manipulate the crystal structure for band convergence and thereby an increased band degeneracy, but also flatten the valence band for an increased band effective mass. Both of them result in an increased density of state effective mass and therefore an enhanced Seebeck coefficient along with a decreased mobility. Moreover, a remarkably reduced lattice thermal conductivity of similar to 0.4 W/m-K is obtained due to the introduced additional point defect phonon scattering and bond softening by the alloying. With the help of Bi-doping at the Ge site for further optimizing the carrier concentration, thermoelectric figure of merit, zT, of similar to 1.7 and average zT(ave) of similar to 0.9 are achieved in 5% AgBiSe2-alloyed rhombohedral GeTe, which demonstrates this material as a promising candidate for low-temperature thermoelectric applications. |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science |
| 语种 | 英语 |
| 出版者 | AMER CHEMICAL SOC |
| 源URL | [http://ir.sic.ac.cn/handle/331005/26888]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Liu, Hongxia,Zhang, Xinyue,Li, Juan,et al. Band and Phonon Engineering for Thermoelectric Enhancements of Rhombohedral GeTe[J]. ACS APPLIED MATERIALS & INTERFACES,2019,11(34):30756. |
| APA | Liu, Hongxia.,Zhang, Xinyue.,Li, Juan.,Bu, Zhonglin.,Meng, Xiang.,...&Li, Wen.(2019).Band and Phonon Engineering for Thermoelectric Enhancements of Rhombohedral GeTe.ACS APPLIED MATERIALS & INTERFACES,11(34),30756. |
| MLA | Liu, Hongxia,et al."Band and Phonon Engineering for Thermoelectric Enhancements of Rhombohedral GeTe".ACS APPLIED MATERIALS & INTERFACES 11.34(2019):30756. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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