Room-Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr-Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid
文献类型：期刊论文
| 作者 | Xu, Meng; Yan, Jian-Min; Chen, Ting-Wei; Xu, Zhi-Xue; Wang, Hui; Guo, Lei; Gao, Guan-Yin; Yan, Shu-Ying; Wang, Fei-Fei; Zhang, Jin-Xing |
| 刊名 | ADVANCED ELECTRONIC MATERIALS
 |
| 出版日期 | 2019-07-01 |
| 卷号 | 5期号:7 |
| ISSN号 | 2199-160X |
| 关键词 | electrical properties ferroelectric field effect ionic liquids oxide semiconductors PMN-PT single crystals |
| DOI | 10.1002/aelm.201900212 |
| 文献子类 | Article |
| 英文摘要 | Integration of different functional materials into a device in which the physical properties can be tuned using an electric field in a reversible and nonvolatile manner is highly desired for the fabrication of compact and energy-efficient multifunctional electronic devices. The integration of In2O3-based semiconductor thin films with ferroelectric 0.71PbMg(1/3)Nb(2/3)O(3)-0.29PbTiO(3) (PMN-0.29PT) single crystals in ferroelectric-field-effect-transistor devices that allow for the tuning of carrier density, carrier type, Fermi level, and their related properties in a reversible and nonvolatile manner, is reported. Specifically, gating of In2-xCrxO3 (x = 0, 0.02, 0.05, 0.08, 0.11) films with a PMN-0.29PT layer provides a means to reversibly tune and modulate the resistivity of the films up to an on-and-off ratio of 5.2 x 10(4)% in a nonvolatile manner at room temperature. Such resistivity modulation is associated with reversible and nonvolatile transformation of the carrier type between n-type and p-type due to polarization switching. Additionally, reversible switching of resistivity is realized utilizing DEME-TFSI ionic liquid as a top-gate material. These results demonstrate that electrical-voltage control of physical properties using PMN-xPT as both substrate and gating material provides a highly effective approach to study the carrier-density/type-related physical properties of semiconductor films. |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | WILEY |
| 源URL | [http://ir.sic.ac.cn/handle/331005/26997]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Xu, Meng,Yan, Jian-Min,Chen, Ting-Wei,et al. Room-Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr-Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid[J]. ADVANCED ELECTRONIC MATERIALS,2019,5(7). |
| APA | Xu, Meng.,Yan, Jian-Min.,Chen, Ting-Wei.,Xu, Zhi-Xue.,Wang, Hui.,...&Zheng, Ren-Kui.(2019).Room-Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr-Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid.ADVANCED ELECTRONIC MATERIALS,5(7). |
| MLA | Xu, Meng,et al."Room-Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr-Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid".ADVANCED ELECTRONIC MATERIALS 5.7(2019). |
入库方式： OAI收割
来源：上海硅酸盐研究所
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