Initial Test of Optoelectronic High Power Microwave Generation From 6H-SiC Photoconductive Switch
文献类型：期刊论文
| 作者 | Wu, Qilin; Zhao, Yuxin; Xun, Tao; Yang, Hanwu; Huang, Wei |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2019-07-01 |
| 卷号 | 40期号:7页码:1167 |
| 关键词 | 6H silicon carbide (6H-SiC) class B microwave power amplifier (MPA) photoconductive semiconductor switches (PCSS) microwave photonics (MWP) |
| ISSN号 | 0741-3106 |
| DOI | 10.1109/LED.2019.2918954 |
| 文献子类 | Article |
| 英文摘要 | High-power photoconductive semiconductor switch (PCSS) working in linear mode can be used for RF generation by modulating the illuminating light. This letter presents a design and initial test of an optoelectronic class B push-pullmicrowave power amplifier (MPA) using two 6H-SiC photoconductive switches. The initial tests have been conducted with bias voltage of +/- 2.4 kV, at 80 kW peak laser pulse power, demonstrating that the SiC PCSS working in linear mode can produce microwaves. Then, circuit simulation is conducted to study the factors affecting the electrical efficiency, such as the quantum efficiency, the peak laser pulse power, and the bias voltage. It is speculated that the MPA could output 1 mW microwave power and achieve electrical efficiency of more than 60% with a bias voltage of 15 kV, quantum efficiency of 0.2, and peak laser pulse power of 100 kW. |
| WOS研究方向 | Engineering |
| 语种 | 英语 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 源URL | [http://ir.sic.ac.cn/handle/331005/27006]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Wu, Qilin,Zhao, Yuxin,Xun, Tao,et al. Initial Test of Optoelectronic High Power Microwave Generation From 6H-SiC Photoconductive Switch[J]. IEEE ELECTRON DEVICE LETTERS,2019,40(7):1167. |
| APA | Wu, Qilin,Zhao, Yuxin,Xun, Tao,Yang, Hanwu,&Huang, Wei.(2019).Initial Test of Optoelectronic High Power Microwave Generation From 6H-SiC Photoconductive Switch.IEEE ELECTRON DEVICE LETTERS,40(7),1167. |
| MLA | Wu, Qilin,et al."Initial Test of Optoelectronic High Power Microwave Generation From 6H-SiC Photoconductive Switch".IEEE ELECTRON DEVICE LETTERS 40.7(2019):1167. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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