Transmittance change with thickness for polycrystalline VO2 films deposited at room temperature
文献类型：期刊论文
| 作者 | Yang, Yan; Cao, Xun; Sun, Guangyao; Long, Shiwei; Chang, Tianci; Li, Xiaozhe; Jin, Ping |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2019-06-30 |
| 卷号 | 791页码:648 |
| 关键词 | Vanadium dioxide Thickness Phase transition Polycrystalline Thin film |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2019.03.278 |
| 文献子类 | Article |
| 英文摘要 | In this work, polycrystalline VO2 thin films have been prepared on BK7 glass substrates by DC magnetron sputtering at room temperature with a post-annealing treatment at 450 degrees C, and relative thickness dependence of the semiconductor-metal transition (SMT) properties have been systematically investigated. It revealed that the prepared VO2 films exhibited unique surfaces composed of particles with various sizes, which became larger with increased film thickness. Different luminous transmittance between the metallic phase and semiconductor phase can be obtained by changing the film thickness based on the optical interference theory. The optimum thickness of VO2 films was around 90 nm with high Delta T-sol of 9.7% and relatively high T(l)(um)( )of 36.4% (higher than theoretical 29.1%), which is a recommendable optical property for practical application. The critical SMT temperature fluctuated when film thickness increased, and the transition speed of the heating process got slower overall with thickness decreasing, which might be caused by mechanical stress between films and substrates. In addition, the transition speed of cooling process turned slower with thickness of VO2 films increasing, which can be ascribed to the slower heat dissipation of thicker films than that of thinner films during the cooling process. These results might give an indication for creating or designing potential materials based on the thickness dependence of phase transition properties of VO2 films. (C) 2019 Elsevier B.V. All rights reserved. |
| WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE SA |
| 源URL | [http://ir.sic.ac.cn/handle/331005/27032]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Yang, Yan,Cao, Xun,Sun, Guangyao,et al. Transmittance change with thickness for polycrystalline VO2 films deposited at room temperature[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2019,791:648. |
| APA | Yang, Yan.,Cao, Xun.,Sun, Guangyao.,Long, Shiwei.,Chang, Tianci.,...&Jin, Ping.(2019).Transmittance change with thickness for polycrystalline VO2 films deposited at room temperature.JOURNAL OF ALLOYS AND COMPOUNDS,791,648. |
| MLA | Yang, Yan,et al."Transmittance change with thickness for polycrystalline VO2 films deposited at room temperature".JOURNAL OF ALLOYS AND COMPOUNDS 791(2019):648. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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