Non-volatility using materials with only volatile properties: Vertically integrated magnetoelectric heterostructures and their potential for multi-level-cell devices
文献类型：期刊论文
| 作者 | Tang, Xiao; Gao, Min; Leung, Chung Ming; Luo, Haosu; Li, Jiefang; Viehland, Dwight |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2019-06-17 |
| 卷号 | 114期号:24 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.5094430 |
| 文献子类 | Article |
| 英文摘要 | Different (1-3) heterostructures, such as BiFeO3-CoFe2O4 and BiFeO3-CuFe2O4 on Pb(Mg1/3Nb2/3)(0.74)Ti0.26O3 (PMN-26PT), were selected for study as possible materials for magnetoelectric (ME) random access memory. The (1-3) heterostructures were deposited, and multimagnetic states were found under different E-field (E) conditions. Upon removal of E, two possible remnant magnetization states remained stable. If an H-field (H) was also applied, two additional stable remnant magnetization states were found. Our investigations demonstrate (1-3) heterostructures with nonvolatility even though the individual phases/substrates had only volatile properties. This simplifies materials selection for multistate systems based on these heterostructures, averting difficulties with compositional nonuniformity and property repeatability, in particular, with regard to PMN-xPT crystal substrates. With such N4 magnetic state systems, a multilevel-cell memory device could readily be built with high ME coupling and numerous accessible magnetic states. |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://ir.sic.ac.cn/handle/331005/27044]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Tang, Xiao,Gao, Min,Leung, Chung Ming,et al. Non-volatility using materials with only volatile properties: Vertically integrated magnetoelectric heterostructures and their potential for multi-level-cell devices[J]. APPLIED PHYSICS LETTERS,2019,114(24). |
| APA | Tang, Xiao,Gao, Min,Leung, Chung Ming,Luo, Haosu,Li, Jiefang,&Viehland, Dwight.(2019).Non-volatility using materials with only volatile properties: Vertically integrated magnetoelectric heterostructures and their potential for multi-level-cell devices.APPLIED PHYSICS LETTERS,114(24). |
| MLA | Tang, Xiao,et al."Non-volatility using materials with only volatile properties: Vertically integrated magnetoelectric heterostructures and their potential for multi-level-cell devices".APPLIED PHYSICS LETTERS 114.24(2019). |
入库方式： OAI收割
来源：上海硅酸盐研究所
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