Thermodynamics, kinetics and electronic properties of point defects in beta-FeSi2
文献类型：期刊论文
| 作者 | Chai, Jun; Ming, Chen; Du, Xiaolong; Qiu, Pengfei; Sun, Yi-Yang; Chen, Lidong |
| 刊名 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS
 |
| 出版日期 | 2019-05-28 |
| 卷号 | 21期号:20页码:10497 |
| ISSN号 | 1463-9076 |
| DOI | 10.1039/c9cp00755e |
| 文献子类 | Article |
| 英文摘要 | beta-FeSi2, a semiconductor material made of two of the most earth-abundant elements, has important applications in thermoelectrics, photovoltaics and optoelectronics owing to its attractive properties such as suitable band gap and air stability over a wide temperature range. While point defects always play a vital role in semiconductor materials, only sporadic studies have been dedicated to the defects in beta-FeSi2. Here, using first-principles calculations we systematically investigate the intrinsic point defects in beta-FeSi2. Our results reveal that the formation energies of the intrinsic defects in beta-FeSi2 are high enough to prevent them from forming in a significant concentration under thermal equilibrium growth conditions. As a possible kinetic process generating intrinsic defects, we study the alpha-to-beta phase transition of FeSi2. We find that the phase transition is a slow process occurring on the time scale of an hour. Incomplete phase transition may lead to kinetically formed intrinsic defects. We further calculate the activation energies of the intrinsic defects and show that the experimentally observed conductivity of pure beta-FeSi2 should be a result of unintentional doping. Possible extrinsic impurities that may lead to n-type and p-type conductivity and their activation energies are calculated, which are in good agreement with available experiments. Our results provide guidance for optimizing the doping strategy of beta-FeSi2 for device applications. |
| WOS研究方向 | Chemistry ; Physics |
| 语种 | 英语 |
| 出版者 | ROYAL SOC CHEMISTRY |
| 源URL | [http://ir.sic.ac.cn/handle/331005/27104]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Chai, Jun,Ming, Chen,Du, Xiaolong,et al. Thermodynamics, kinetics and electronic properties of point defects in beta-FeSi2[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2019,21(20):10497. |
| APA | Chai, Jun,Ming, Chen,Du, Xiaolong,Qiu, Pengfei,Sun, Yi-Yang,&Chen, Lidong.(2019).Thermodynamics, kinetics and electronic properties of point defects in beta-FeSi2.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,21(20),10497. |
| MLA | Chai, Jun,et al."Thermodynamics, kinetics and electronic properties of point defects in beta-FeSi2".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 21.20(2019):10497. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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