Epitaxial growth of (111) BaTiO3 thin films on (0002) GaN substrates with SrTiO3/TiN buffer layers
文献类型：期刊论文
| 作者 | Jia, Shasha; Li, Xiaomin; Li, Guanjie; Xie, Sijie; Chen, Yongbo |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| 出版日期 | 2019-05-01 |
| 卷号 | 30期号:10页码:9751 |
| ISSN号 | 0957-4522 |
| DOI | 10.1007/s10854-019-01310-3 |
| 文献子类 | Article |
| 英文摘要 | High-quality perovskite (111) BaTiO3 (BTO) ferroelectric thin films were epitaxially grown on wurtzite (0002) GaN substrates with the rationally designed SrTiO3 (STO)/TiN buffer layers by pulsed laser deposition. Particularly, TiN thin films with excellent conductivity could also be served as the bottom electrodes. The epitaxial relationship of the BTO/STO/TiN/GaN heterostructures was proved to be (111)[1 (1) over bar0] BTO//(111)[1 (1) over bar0] STO//(111)[1 (1) over bar0] TiN//(0002)[11 (2) over bar0] GaN by reflection high-energy electron diffraction and high resolution X-ray diffraction. Furthermore, the detailed interface structure and epitaxial relationship of the BTO/STO/TiN/GaN heterostructures were identified on atomic scale by high resolution transmission electron microscopy. The epitaxial (111) BTO ferroelectric thin films on GaN substrates exhibited the favorable ferroelectric properties with the remnant polarization of 12.97Ccm(-2). The high-quality epitaxial integration of perovskite BTO thin films on wurtzite GaN substrates could promote the potential applications in the advanced GaN-based integrated ferroelectric devices. |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | SPRINGER |
| 源URL | [http://ir.sic.ac.cn/handle/331005/27141]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Jia, Shasha,Li, Xiaomin,Li, Guanjie,et al. Epitaxial growth of (111) BaTiO3 thin films on (0002) GaN substrates with SrTiO3/TiN buffer layers[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2019,30(10):9751. |
| APA | Jia, Shasha,Li, Xiaomin,Li, Guanjie,Xie, Sijie,&Chen, Yongbo.(2019).Epitaxial growth of (111) BaTiO3 thin films on (0002) GaN substrates with SrTiO3/TiN buffer layers.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,30(10),9751. |
| MLA | Jia, Shasha,et al."Epitaxial growth of (111) BaTiO3 thin films on (0002) GaN substrates with SrTiO3/TiN buffer layers".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 30.10(2019):9751. |
入库方式： OAI收割
来源：上海硅酸盐研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。