Large current nanosecond pulse generating circuit for driving semiconductor laser diode
文献类型:期刊论文
作者 | Wen, Shaocong; Wang, Mao; Xie, Jie; Wu, Dongmin |
刊名 | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
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出版日期 | 2019-04-01 |
卷号 | 61期号:4页码:867 |
关键词 | circuit modeling driver circuit light detection and ranging (Lidar) semiconductor lasers time-of-flight (TOF) |
ISSN号 | 0895-2477 |
DOI | 10.1002/mop.31654 |
文献子类 | Article |
英文摘要 | The semiconductor laser diode SPL LL90_3, which integrates the RC charge-discharge circuit and a MOSFET switching device, is usually used for pulsing laser in the light detection and ranging system with a rated peak power of 70 W at 30 ns pulse-width. To further increase the peak power and reduce the pulse width and rising edge, a driving circuit with an avalanche transistor used as a pre-switching device is proposed. A trigger pulse with about 10 ns'-pulse-width is obtained to drive the laser diode. At the same time, the pulsing laser's peak power can reach 141 W at the testing repetition rate of 55 kHz. |
WOS研究方向 | Engineering ; Optics |
语种 | 英语 |
出版者 | WILEY |
源URL | [http://ir.sic.ac.cn/handle/331005/27230] ![]() |
专题 | 中国科学院上海硅酸盐研究所 |
推荐引用方式 GB/T 7714 | Wen, Shaocong,Wang, Mao,Xie, Jie,et al. Large current nanosecond pulse generating circuit for driving semiconductor laser diode[J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS,2019,61(4):867. |
APA | Wen, Shaocong,Wang, Mao,Xie, Jie,&Wu, Dongmin.(2019).Large current nanosecond pulse generating circuit for driving semiconductor laser diode.MICROWAVE AND OPTICAL TECHNOLOGY LETTERS,61(4),867. |
MLA | Wen, Shaocong,et al."Large current nanosecond pulse generating circuit for driving semiconductor laser diode".MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 61.4(2019):867. |
入库方式: OAI收割
来源:上海硅酸盐研究所
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