Manipulation of the Electronic Transport Properties of Charge-Transfer Oxide Thin Films of NdNiO3 Using Static and Electric-Field-Controllable Dynamic Lattice Strain
文献类型：期刊论文
| 作者 | Yan, Jian-Min; Xu, Meng; Chen, Ting-Wei; Yang, Ming-Min; Liu, Fei; Wang, Hui; Guo, Lei; Xu, Zhi-Xue; Fan, Fang-Yuan; Gao, Guan-Yin |
| 刊名 | PHYSICAL REVIEW APPLIED
 |
| 出版日期 | 2019-03-15 |
| 卷号 | 11期号:3 |
| ISSN号 | 2331-7019 |
| DOI | 10.1103/PhysRevApplied.11.034037 |
| 文献子类 | Article |
| 英文摘要 | Using perovskite-type charge-transfer oxide thin films of NdNiO3 (NNO) as a model system, we demonstrate that the effects of lattice strain on the electronic transport properties can be more comprehensively understood by growing NNO films on a number of (001)-, (011)-, and (111)-cut single-crystal substrates with different lattice mismatches including the relaxor-based 0.31Pb (In1/2Nb1/2)O-3 -0.35Pb (Mg1/3Nb2/3)O-3-0.34PbTiO(3) (PIN-PMN-PT) and 0.71Pb (Mg1/3Nb2/3)O-3-0.29PbTiO(3) (PMN-PT) ferroelectric (FE) single crystals. In addition to the static lattice strains from conventional substrates (e.g., SrTiO3, LaAlO3), we in situ impose in-plane compressive or tensile strains to NNO films using FE/ferroelastic domain switching of FE substrates. An unprecedented electric-field-induced large out-of-plane compressive strain (-0.53%) and in-plane tensile strain (+0.81%) are achieved in the 25-nm NNO film by switching the polarization direction of the PIN-PMN-PT substrate at T= 200 K. This value is approximately 7.4 to 45 times larger than those previously reported in FE substrate-based heterostructures. As a result of the induced large lattice strain, the resistivity of the NNO film is modulated up to 125%. Further, taking advantage of the linear piezoelectric strain, a quantitative relationship between the resistivity and the in-plane strain of the NNO film is established, with a gauge fact of (Delta rho(/)rho)/delta epsilon(xx)similar to 40.8. Moreover, using the domain-engineered FE/ferroelastic switching of PMN-PT substrates, multiple stable resistance states with good retention and endurance properties can be obtained at room temperature and the metal-to-insulator transition temperature (T-MI) of NNO films can be modified by precisely controlling the electric-field-pulse sequence as a result of the nonvolatile remnant strain transferring from the PMN-PT to the NNO film. Our results demonstrate that the electric-field-tunable ferroelastic/piezoelectric strain approach can be utilized to gain deeper insight into the intrinsic strain-property relationship of perovskite nickelate films and provide a simple and energy efficient way to construct multistate resistive memories. |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| 出版者 | AMER PHYSICAL SOC |
| 源URL | [http://ir.sic.ac.cn/handle/331005/27270]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Yan, Jian-Min,Xu, Meng,Chen, Ting-Wei,et al. Manipulation of the Electronic Transport Properties of Charge-Transfer Oxide Thin Films of NdNiO3 Using Static and Electric-Field-Controllable Dynamic Lattice Strain[J]. PHYSICAL REVIEW APPLIED,2019,11(3). |
| APA | Yan, Jian-Min.,Xu, Meng.,Chen, Ting-Wei.,Yang, Ming-Min.,Liu, Fei.,...&Zheng, Ren-Kui.(2019).Manipulation of the Electronic Transport Properties of Charge-Transfer Oxide Thin Films of NdNiO3 Using Static and Electric-Field-Controllable Dynamic Lattice Strain.PHYSICAL REVIEW APPLIED,11(3). |
| MLA | Yan, Jian-Min,et al."Manipulation of the Electronic Transport Properties of Charge-Transfer Oxide Thin Films of NdNiO3 Using Static and Electric-Field-Controllable Dynamic Lattice Strain".PHYSICAL REVIEW APPLIED 11.3(2019). |
入库方式： OAI收割
来源：上海硅酸盐研究所
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