Anisotropic resistance switching in hexagonal manganites
文献类型：期刊论文
| 作者 | Wang, Xueyun; Yang, Danni; Zhang, Hui-Min; Song, Chuangye; Wang, Jing; Tan, Guotai; Zheng, Renkui; Dong, Shuai; Cheong, Sang-Wook; Zhang, Jinxing |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2019-02-26 |
| 卷号 | 99期号:5 |
| ISSN号 | 2469-9950 |
| DOI | 10.1103/PhysRevB.99.054106 |
| 文献子类 | Article |
| 英文摘要 | ( )The distribution and manipulation of oxygen defects, including oxygen vacancies (O-v) and interstitial oxygen (O-t), directly results in modifications in a variety of emergent functionalities in transition metal oxides. This is applicable in nanoscale control, which is a key issue in data and energy storage devices, such as resistive switching memory. Among all the oxygen-defect-related topics, nanoscale oxygen defect migration paths have a direct impact on the performance of memory devices, and are intrinsically determined by the structural anisotropy. Here, we use layered single-crystalline ferroelectric, hexagonal manganites (h-REMnO3) to demonstrate O-i-migration-induced nanoscale manipulation of conductance in the ab plane. Conversely, this unique phenomenon cannot be achieved along the c axis. Furthermore, a density functional theory calculation reveals that the energy barriers are lower for planar migrations of O-i, when compared to out-of-plane migration, and are responsible for such anisotropic resistance switching. |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | AMER PHYSICAL SOC |
| 源URL | [http://ir.sic.ac.cn/handle/331005/27320]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Wang, Xueyun,Yang, Danni,Zhang, Hui-Min,et al. Anisotropic resistance switching in hexagonal manganites[J]. PHYSICAL REVIEW B,2019,99(5). |
| APA | Wang, Xueyun.,Yang, Danni.,Zhang, Hui-Min.,Song, Chuangye.,Wang, Jing.,...&Zhang, Jinxing.(2019).Anisotropic resistance switching in hexagonal manganites.PHYSICAL REVIEW B,99(5). |
| MLA | Wang, Xueyun,et al."Anisotropic resistance switching in hexagonal manganites".PHYSICAL REVIEW B 99.5(2019). |
入库方式： OAI收割
来源：上海硅酸盐研究所
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